Oled display device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016149161-A1
Application number	US-201514698265-A
Country	US
Kind code	A1
Filing date	Apr 28, 2015
Priority date	Nov 24, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

First claim

What is claimed is:

1 . An organic light-emitting diode (OLED) display device, comprising:
a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; a second electrode disposed on the organic light-emitting layer; and a transflective layer contacting a lower surface of the first electrode and having a higher refractive index than the first electrode.

2 . The OLED display device of claim 1 , wherein the refractive indexes of the transflective layer and the first electrode have a difference of 0.5 or greater.

3 . The OLED display device of claim 1 , wherein the transflective layer comprises a material having a refractive index of 2.5 or higher.

4 . The OLED display device of claim 1 , wherein the transflective layer comprises at least one material selected from the group consisting of amorphous silicon (a-Si), polycrystalline silicon (p-Si), and silicon carbide (SiC).

5 . The OLED display device of claim 1 , wherein the transflective layer has a thickness of 50 Å to 200 Å.

6 . The OLED display device of claim 1 , wherein the first electrode has a thickness of 50 Å to 100 Å.

7 . The OLED display device of claim 1 , further comprising:
a transparent layer disposed on a lower surface of the transflective layer.

8 . The OLED display device of claim 7 , wherein the transparent layer comprises a same material or materials as the first electrode.

9 . The OLED display device of claim 7 , wherein the transparent layer comprises at least one material selected from the group consisting of indium tin oxide (ITO), tin oxide (SnO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), aluminum zinc oxide (AZO), and zinc gallium oxide (GZO).

10 . A method of manufacturing an OLED display device, the method comprising:
forming a transistor device on a substrate; forming a first electrode electrically connected to the transistor device; forming an organic light-emitting layer on the first electrode; forming a second electrode on the organic light-emitting layer; and forming a transflective layer having higher refractive index than the first electrode on a lower surface of the first electrode.

11 . The method of claim 10 , wherein the refractive indexes of the transflective layer and the first electrode have a difference of 0.5 or greater.

12 . The method of claim 10 , wherein the transflective layer is formed of a material having a refractive index of 2.5 or higher.

13 . The method of claim 10 , wherein the transflective layer comprises at least one material selected from the group consisting of a-Si, p-Si, and SiC.

14 . The method of claim 10 , wherein the first electrode has a thickness of 50 Å to 100 Å.

15 . The method of claim 10 , wherein the transflective layer has a thickness of 50 Å to 200 Å.

16 . A method of manufacturing an OLED display device, the method comprising:
forming a transistor device on a substrate; forming a transflective layer and a contact hole in the substrate, the contact hole exposing part of the transistor device therethrough; forming a first electrode overlapping the transflective layer and electrically connected to the transistor device via the contact hole; forming an organic light-emitting layer on the first electrode; and forming a second electrode on the organic light-emitting layer, wherein the transflective layer has a higher refractive index than the first electrode.

17 . The method of claim 16 , wherein the refractive indexes of the transflective layer and the first electrode have a difference of 0.5 or greater.

18 . The method of claim 16 , wherein the transflective layer is formed of a material having a refractive index of 2.5 or higher.

19 . The method of claim 16 , wherein the transflective layer includes at least one selected from the group consisting of a-Si, p-Si, and SiC.

20 . The method of claim 10 , wherein the first electrode has a thickness of 50 Å to 100 Å.

Assignees

• Samsung Display Co Ltd

Inventors

• Lee Dong Min
• Shin Hyun Eok
• Yang Chan Woo
• Yang Su Kyoung

Classifications

• H10K59/878

  comprising reflective means · CPC title

• H10K59/876

  comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title

• H10K50/856

  comprising reflective means · CPC title

• H10K59/8051 Primary

  Anodes · CPC title

• H01L51/56

  Electricity · mapped topic