Phase-change memory cell with mixed-material switchable region
US-2024196766-A1 · Jun 13, 2024 · US
Dielectric thin film on electrodes for resistance change memory devices
US2016149127A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016149127-A1 |
| Application number | US-201615013517-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 2, 2016 |
| Priority date | Sep 14, 2011 |
| Publication date | May 26, 2016 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method comprising: forming a storage structure of a phase change memory (PCM) device, the storage structure having a chalcogenide material; forming an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure; and forming a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. 2 . The method of claim 1 , wherein the electrode is a first electrode having a first electrically conductive material and the storage structure includes a first surface that is directly coupled with the first electrode, the method further comprising: forming a second electrode having a second electrically conductive material, the second electrode being directly coupled with a second surface of the storage structure that is disposed opposite to the first surface of the storage structure. 3 . The method of claim 2 , further comprising: forming a third electrode having a third electrically conductive material, the third electrode being directly coupled with the dielectric film such that the dielectric film is disposed between the first electrode and the third electrode. 4 . The method of claim 1 , wherein the dielectric film is a first dielectric film having a first dielectric material and the storage structure includes a first surface that is directly coupled with the first electrode, the method further comprising: forming a second dielectric film having a second dielectric material, the second dielectric film being directly coupled with a second surface of the storage structure that is disposed opposite to the first surface of the storage structure. 5 . The method of claim 1 , wherein forming the dielectric film comprises: depositing a ceramic or a polymer to form the dielectric film, the dielectric film having a thickness of 2 nanometers or less. 6 . The method of claim 1 , further comprising: forming a word-line or a bit-line, wherein the electrode is an intervening structure between the storage structure and the word-line or the bit-line and the dielectric film is part of an electrical pathway between the word-line or the bit-line and the storage structure.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L45/06Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016149127A1 cover?
- Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the elect…
- Who is the assignee on this patent?
- Intel Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L45/06. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).