Optoelectronic semiconductor component

Patent metadata

Field	Value
Publication number	US-2016149101-A1
Application number	US-201414900144-A
Country	US
Kind code	A1
Filing date	Jun 25, 2014
Priority date	Jun 26, 2013
Publication date	May 26, 2016
Grant date	—

Abstract

In at least one embodiment, the optoelectronic semiconductor component ( 1 ) comprises a cast body ( 4 ). At least one optoelectronic semiconductor chip ( 3 ) is designed to generate radiation and is situated in a recess ( 43 ) in the cast body ( 4 ). The semiconductor chip ( 3 ) has a main radiation side ( 30 ) having an edge length (L). At least one lens plate ( 5 ), which covers the recess ( 43 ), is arranged downstream of the semiconductor chip ( 1 ) in a main radiation direction (M). The lens plate ( 5 ) has a plurality of structural elements ( 55 ) on an upper side ( 50 ) that faces away from the semiconductor chip ( 1 ). The lens plate ( 5 ) has a diameter (D) that is at least 1.5 times the edge length (L). A thickness (H) of the lens plate ( 5 ) is at least 0.1 times and at most 1.5 times the diameter (D). The lens plate ( 5 ) covers the main radiation side ( 30 ) completely.

First claim

1 . Optoelectronic semiconductor component having
a potting body with at least one recess, at least one optoelectronic semiconductor chip for generating radiation, which is located in the recess and comprises a main radiation side with an edge length, and at least one optical plate, which covers the recess and which is arranged downstream of the semiconductor chip in a main emission direction, wherein the optical plate comprises a multiplicity of pattern elements on a top remote from the semiconductor chip, the optical plate has a diameter which amounts to at least 1.5 times the edge length of the semiconductor chip, the optical plate has a thickness which amounts to at least 0.1 times and at most 1.5 times the diameter, the optical plate completely covers the main radiation side when viewed in plan view the optical plate comprises first pattern elements and second pattern elements, the first pattern elements have a reflective action and the second pattern elements have a diffusing action with regard to radiation emitted by the semiconductor chip, the first pattern elements are mounted in a central region of the top and, when viewed in plan view, the central region completely covers the main radiation side, the second pattern elements are mounted in a peripheral region of the top and the peripheral region surrounds the central region, when viewed in plan view, and wherein the optical plate is a plate with on average plane-parallel main sides.

2 . (canceled)

3 . Optoelectronic semiconductor component according to claim 16 ,
wherein the first pattern elements have a reflective action and are applied to a base member of the optical plate and the second pattern elements have a refractive action and are shaped from the base member, and wherein the optical plate is a plate with on average plane-parallel main sides.

4 . Optoelectronic semiconductor component according to claim 1 ,
in which the first pattern elements are particles with a reflective action, which are embedded in a matrix material and are distributed uniformly in the matrix material in the central region, and in which the second pattern elements are formed by holes in or by raised portions on the top.

5 . Optoelectronic semiconductor component according to claim 1 ,
in which the optical plate comprises an average reflectivity in the central region for radiation generated in the semiconductor component of between 50% and 85% inclusive.

6 . Optoelectronic semiconductor component according to claim 1 ,
in which the semiconductor chip in the recess rests form-fittingly against the potting body such that chip side faces of the semiconductor chip directly adjoin the potting body over their entire surface.

7 . Optoelectronic semiconductor component according to claim 1 ,
in which a conversion element is located between the semiconductor chip and the optical plate, in each case directly adjacent, said conversion element being configured to convert some of the radiation generated by the semiconductor chip when in operation into radiation of another wavelength, wherein the conversion element adjoins the potting body in a direction parallel to the main radiation side.

8 . Optoelectronic semiconductor component according to claim 1 ,
in which the optical plate, when viewed in plan view, lies directly on the potting body, next to the semiconductor chip and around the semiconductor chip.

9 . Optoelectronic semiconductor component according to claim 1 ,
in which, when viewed in plan view, the optical plate is a circular plate and axes of symmetry, extending perpendicular to the main radiation side, of the optical plate and of the semiconductor chip extend congruently.

10 . Optoelectronic semiconductor component according to claim 9 ,
in which the pattern elements are arranged rotationally symmetrically around the axes of symmetry of the optical plate.

11 . Optoelectronic semiconductor component according to claim 1 ,
in which, when viewed in plan view, a surface density of the pattern elements on the top of the optical plate decreases outwards in a direction away from the axes of symmetry.

12 . Optoelectronic semiconductor component according to claim 1 ,
in which the pattern elements are arranged regularly and in each case have the same cross-sectional shape, in a direction perpendicular to the main radiation side.

13 . Optoelectronic semiconductor component according to claim 16 ,
in which the pattern elements are triangular in shape when viewed in cross-section and boundary faces of the pattern elements are oriented at an angle of between 60° and 80° inclusive relative to a plane defined by the main radiation side.

14 . Optoelectronic semiconductor component according to claim 1 ,
in which the top of the optical plate is a radiation exit side of the semiconductor component, wherein a bottom of the optical plate facing the semiconductor chip is planar in shape and wherein the semiconductor chip and the potting body are mounted on a carrier top of a carrier.

15 . Optoelectronic semiconductor component according to claim 4 ,
in which
a difference in refractive index between the matrix material, which is a silicone, and a material of the first pattern elements, which is a metal oxide, amounts to at least 0.2 and the matrix material has a thickness of between 0.25 mm and 1.0 mm inclusive,
the edge length of the semiconductor chip is between 0.5 mm and 2.5 mm inclusive,
the central region has a diameter of between 1.6 times and 2.5 times the edge length inclusive,
the diameter of the optical plate is between seven times and fifteen times the edge length inclusive,
the thickness of the optical plate amounts to between 1.6 times and 2.5 times the edge length inclusive,
the first pattern elements have an average diameter of between 250 nm and 1 μm inclusive,
the second pattern elements, when viewed in plan view, are densely packed on the top over the entire peripheral region and have an average diameter or an average edge length of between 0.75 μm and 3 μm inclusive, and
the optical plate and the second pattern elements consist of a transparent material, selected from the group comprising glass, polycarbonate and polyacrylate, or comprise at least one of these materials.

16 . Optoelectronic semiconductor component having
a potting body with at least one recess, at least one optoelectronic semiconductor chip for generating radiation, which is located in the recess and comprises a main radiation side with an edge length, and at least one optical plate, which covers the recess and which is arranged downstream of the semiconductor chip in a main emission direction, wherein the optical plate comprises a multiplicity of pattern elements on a top remote from the semiconductor chip, the optical plate has a diameter which amounts to at least 1.5 times the edge length of the semiconductor chip, the optical plate has a thickness which amounts to at least 0.1 times and at most 1.5 times the diameter, and the optical plate completely covers the main radiation side when viewed in plan view.

Assignees

• Osram Opto Semiconductors Gmbh
• OSRAM Opto Semicouductors GmbH

Inventors

• Singer Frank
• Moench Wolfgang
• Linkov Alexander

Classifications

• H10H20/882

  Scattering means (H10H20/82 takes precedence) · CPC title

• H10H20/8514

  characterised by their shape, e.g. plate or foil · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title