Optoelectronic component

Patent metadata

Field	Value
Publication number	US-2016149092-A1
Application number	US-201514980027-A
Country	US
Kind code	A1
Filing date	Dec 28, 2015
Priority date	Jul 12, 2010
Publication date	May 26, 2016
Grant date	—

Abstract

An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip, wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and the phosphor is arranged in a lamina that bears directly on the semiconductor chip.

First claim

1 . An optoelectronic component comprising:
a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip,
wherein
a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and
the phosphor is arranged in a lamina that bears directly on the semiconductor chip.

2 . The optoelectronic component according to claim 1 , wherein the lamina comprises a matrix material into which the phosphor is introduced at a concentration of 5% by weight to 50% by weight.

3 . The optoelectronic component according to claim 2 , wherein the lamina has a thickness of 30 micrometers to 200 micrometers.

4 . The optoelectronic component according to claim 1 , wherein the lamina is ceramic and has a phosphor concentration of 10% by weight to 80% by weight.

5 . The optoelectronic component according to claim 1 , wherein the color loci of the mixed light composed of the primary radiation emitted by the semiconductor chip with a dominant wavelength of approximately 440 nm to approximately 455 nm and composed of secondary radiation emerging from the phosphor with a dominant wavelength of approximately 490 nm to approximately 550 nm lie in the CIE diagram so close to one another that, given uniform phosphor concentration, the dominant wavelengths of the mixed light lie within a wavelength range of approximately 2 to 4 nm.

6 . The optoelectronic component according to claim 5 , wherein the color locus of the optoelectronic component that emits mixed light lies in the CIE diagram on the areas spanned by different blue standards EN 12966 C1 (VMS) and EN 12966 C2 (VMS).

7 . The optoelectronic component according to claim 1 , wherein the phosphor comprises one of: an europium-activated blue-green silicate which is a chlorosilicate having empirical formula Ca 8-x-y Eu x Mn y Mg(SiO 4 ) 4 C1 2 , wherein y≧0.03 and x=0.005 and x=1.5, an europium-activated orthosilicate having empirical formula (Ca,Sr,Ba) 2 SiO 4 :EU, an europium-activated thiogallate having empirical formula (Mg,Ca,Sr,Ba)Ga 2 S 4 :EU, an europium-activated SiON having empirical formula Ba 3 Si 6 O 12 N 2 :EU, and a beta-SiAlON.

8 . The optoelectronic component according to claim 1 , wherein the phosphor has a quantum efficiency of up to 70%.

9 . An optoelectronic component comprising:
a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip,
wherein
a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and
the phosphor comprises an electrophoretically deposited phosphor layer applied on a radiation exit area of the semiconductor chip, said phosphor layer having a thickness of 5 micrometers to 50 micrometers.

10 . The optoelectronic component according to claim 9 , wherein the color loci of the mixed light composed of the primary radiation emitted by the semiconductor chip with a dominant wavelength of approximately 440 nm to approximately 455 nm and composed of secondary radiation emerging from the phosphor with a dominant wavelength of approximately 490 nm to approximately 550 nm lie in the CIE diagram so close to one another that, given uniform phosphor concentration, the dominant wavelengths of the mixed light lie within a wavelength range of approximately 2 to 4 nm.

11 . The optoelectronic component according to claim 10 , wherein the color locus of the optoelectronic component that emits mixed light lies in the CIE diagram on the areas spanned by different blue standards EN 12966 C1 (VMS) and EN 12966 C2 (VMS).

12 . The optoelectronic component according to claim 9 , wherein the phosphor comprises one of: an europium-activated blue-green silicate which is a chlorosilicate having empirical formula Ca 8-x-y Eu x Mn y Mg(SiO 4 ) 4 C1 2 , wherein y≧0.03 and x=0.005 and x=1.5, an europium-activated orthosilicate having empirical formula (Ca,Sr,Ba) 2 SiO 4 :EU, an europium-activated thiogallate having empirical formula (Mg,Ca,Sr,Ba)Ga 2 S 4 :EU, an europium-activated SiON having empirical formula Ba 3 Si 6 O 12 N 2 :EU, and a beta-SiAlON.

13 . The optoelectronic component according to claim 9 , wherein the phosphor has a quantum efficiency of up to 70%.

14 . An optoelectronic component comprising:
a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip,
wherein
a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and
the phosphor is arranged at and/or in an exit window terminating the optoelectronic component around the semiconductor chip.

15 . The optoelectronic component according to the claim 14 , wherein the phosphor concentration in the exit window is 2% by weight to 10% by weight.

16 . The optoelectronic component according to claim 14 , wherein the color loci of the mixed light composed of the primary radiation emitted by the semiconductor chip with a dominant wavelength of approximately 440 nm to approximately 455 nm and composed of secondary radiation emerging from the phosphor with a dominant wavelength of approximately 490 nm to approximately 550 nm lie in the CIE diagram so close to one another that, given uniform phosphor concentration, the dominant wavelengths of the mixed light lie within a wavelength range of approximately 2 to 4 nm.

17 . The optoelectronic component according to claim 16 , wherein the color locus of the optoelectronic component that emits mixed light lies in the CIE diagram on the areas spanned by different blue standards EN 12966 C1 (VMS) and EN 12966 C2 (VMS).

18 . The optoelectronic component according to claim 14 , wherein the phosphor comprises one of: an europium-activated blue-green silicate which is a chlorosilicate having empirical formula Ca 8-x-y Eu x Mn y Mg(SiO 4 ) 4 C1 2 ,

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Baade Torsten
• Grosse Kristin

Classifications

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• C09K11/77342

  Silicates · CPC title

• C09K11/77347

  Silicon Nitrides or Silicon Oxynitrides · CPC title

• C09K11/0883 Primary

  Arsenides; Nitrides; Phosphides · CPC title

• C09K11/7731

  with alkaline earth metals · CPC title