Organic light-emitting diode display and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016148983-A1
Application number	US-201514708070-A
Country	US
Kind code	A1
Filing date	May 8, 2015
Priority date	Nov 21, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

An OLED display and a method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate and a semiconductor layer formed over the substrate, wherein the semiconductor layer includes a channel and a contact region formed on opposing sides of the channel. The display also includes an insulating layer formed over the semiconductor layer and having a contact hole exposing the contact region, and an OLED formed over the insulating layer, wherein the OLED is electrically connected to the contact region through the contact hole, and wherein at least a portion of the contact hole is formed directly above the contact region.

First claim

What is claimed is:

1 . An organic light-emitting diode (OLED) display, comprising:
a substrate; a semiconductor layer formed over the substrate, wherein the semiconductor layer includes a channel and a contact region formed on opposing sides of the channel; an insulating layer formed over the semiconductor layer and having a contact hole exposing the contact region; and an OLED formed over the insulating layer, wherein the OLED is electrically connected to the contact region through the contact hole, and wherein at least a portion of the contact hole is formed directly above the contact region.

2 . The OLED display of claim 1 , wherein the contact hole has top and bottom portions opposing each other, wherein the contact region has top and bottom portions opposing each other, and wherein the bottom portion of the contact hole is connected to the top portion of the contact region.

3 . The OLED display of claim 2 , wherein the width of the bottom portion of the contact hole and the width of the top portion of the contact region are substantially the same.

4 . The OLED display of claim 3 , wherein the width of the contact hole gradually increases from the bottom portion to the top portion thereof.

5 . The OLED display of claim 1 , further comprising a driving gate electrode formed over the channel, wherein the channel includes a switching channel and a driving channel separated from each other,
wherein the insulating layer includes a gate insulating layer formed over the semiconductor layer and an interlayer insulating layer formed over the gate insulating layer, wherein the driving gate electrode is formed between the gate insulating layer and the interlayer insulating layer and overlapping a portion of the driving channel, and wherein the length of the driving gate electrode is less than the length of the driving channel.

6 . The OLED display of claim 5 , further comprising a switching gate electrode formed between the gate insulating layer and the interlayer insulating layer and overlapping a portion of the switching channel, wherein the length of the switching gate electrode is less than the length of the switching channel.

7 . The OLED display of claim 1 , further comprising a passivation layer formed over the interlayer insulating layer,
wherein the OLED includes i) a pixel electrode formed over the passivation layer and electrically connected to the semiconductor layer, ii) an organic emission layer formed over the pixel electrode, and iii) a common electrode formed over the organic emission layer.

8 . A method of manufacturing an organic light-emitting diode (OLED) display, comprising:
forming a semiconductor layer over a substrate; forming an insulating layer over the semiconductor layer; etching the insulating layer so as to form a contact hole exposing a portion of the semiconductor layer; and performing a contact doping process so as to form a contact region in a portion of the semiconductor layer exposed by the contact hole.

9 . The method of claim 8 , wherein the forming of the contact hole and the forming of the contact region are performed with the same plasma processing device.

10 . The method of claim 9 , wherein the etching is performed with a fluorine series gas in the plasma processing device, and wherein the contact doping process is performed with a compound of Group 3 ions and a fluorine series gas in the plasma processing device.

11 . The method of claim 10 , wherein at least a portion of the contact hole is formed directly above the contact region.

12 . The method of claim 8 , further comprising performing a channel doping process so as to form the channel in the semiconductor layer after forming the semiconductor layer.

13 . The method of claim 8 , wherein the contact hole has top and bottom portions opposing each other, wherein the contact region has top and bottom portions opposing each other, and wherein the bottom portion of the contact hole is connected to the top portion of the contact region.

14 . The OLED display of claim 13 , wherein the width of the bottom portion of the contact hole and the width of the top portion of the contact region are substantially the same.

15 . The OLED display of claim 13 , wherein the width of the contact hole gradually increases from the bottom portion to the top portion thereof.

16 . An organic light-emitting diode (OLED) display, comprising:
a substrate; a driving transistor including i) a driving semiconductor layer formed over the substrate and including a driving channel having two lateral ends and ii) a driving contact region formed adjacent to the lateral ends; an insulating layer formed over the driving semiconductor layer and having a driving contact hole extending from the driving contact region; and an OLED formed over the insulating layer and electrically connected to the driving contact region through the driving contact hole.

17 . The display of claim 16 , wherein at least a portion of the contact hole is formed directly above the contact region.

18 . The display of claim 16 , further comprising a switching transistor including i) a switching semiconductor layer formed over the substrate and including a switching channel having two lateral ends and ii) a switching contact region formed adjacent to the lateral ends, wherein the switching transistor is electrically connected to the driving transistor.

19 . The display of claim 18 , wherein the driving and switching contact holes each has top and bottom portions opposing each other, wherein the driving and switching contact regions each has top and bottom portions opposing each other, wherein the bottom portions of the contact holes are respectively connected to the top portions of the contact regions, and wherein the widths of the bottom portions of the contact holes and the widths of the top portions of the contact regions are substantially the same, respectively.

20 . The display of claim 18 , wherein each of the widths of the driving and switching channels is respectively greater than each of the widths of the driving and switching gate electrodes.

Assignees

• Samsung Display Co Ltd

Inventors

• Cha Myoung Geun
• Kim Dong Jo
• Khang Yoon Ho
• Lee Jong Chan

Classifications

• H10P50/283

  by chemical means · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6713 Primary

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title