Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory Application

Patent metadata

Field	Value
Publication number	US-2016148976-A1
Application number	US-201414554388-A
Country	US
Kind code	A1
Filing date	Nov 26, 2014
Priority date	Nov 26, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on a silicon semiconductor layer doped with both carbon and nitrogen. The metal layer of the selector element can include conductive materials such as carbon, tungsten, titanium nitride, or combinations thereof.

First claim

What is claimed is:

1 . A nonvolatile memory cell comprising:
a first electrode layer; a selector element; wherein the selector element comprises a first conductive layer, a first interface layer, a semiconductor layer, a second interface layer, and a second conductive layer; wherein the semiconductor layer comprises silicon doped with both carbon and nitrogen; and a second electrode layer.

2 . The nonvolatile memory cell as in claim 1 , wherein a thickness of the semiconductor layer is between about 10 nm and about 40 nm.

3 . The nonvolatile memory cell as in claim 1 , wherein a thickness of each of first conductive layer and the second conductive layer is between about 10 nm and about 100 nm.

4 . The nonvolatile memory cell as in claim 1 , wherein a thickness of each of the first conductive layer and the second conductive layer is about 50 nm.

5 . The nonvolatile memory cell as in claim 1 , wherein a thickness of each of the first interface layer and the second interface layer is between about 2 nm and about 20 nm.

6 . The nonvolatile memory cell as in claim 1 , wherein the first conductive layer comprises one of tungsten, titanium nitride, or a combination thereof.

7 . The nonvolatile memory cell as in claim 1 , wherein the second conductive layer comprises one of tungsten, titanium nitride, or a combination thereof.

8 . The nonvolatile memory cell as in claim 1 , wherein the first conductive layer and the second conductive layer comprise a same material.

9 . The nonvolatile memory cell as in claim 1 , wherein the first conductive layer and the second conductive layer comprise a different material.

10 . The nonvolatile memory cell as in claim 1 , wherein a concentration of carbon in the semiconductor layer is between about 0.1 atomic % and about 25 atomic %.

11 . The nonvolatile memory cell as in claim 1 , wherein a concentration of nitrogen in the semiconductor layer is between about 0.1 atomic % and about 25 atomic %.

12 . The nonvolatile memory cell as in claim 1 , wherein each of the first interface layer and the second interface layer comprises carbon.

13 . The nonvolatile memory cell as in claim 1 , wherein the first conductive layer comprises one of tungsten, titanium nitride, or a combination thereof, the first interface layer comprises carbon, the second interface layer comprises carbon, and the second conductive layer comprises one of tungsten, titanium nitride, or a combination thereof

14 . A nonvolatile memory cell comprising:
a first electrode layer, wherein the first electrode layer comprises tungsten; a selector element; wherein the selector element comprises a first conductive layer, a first interface layer, a semiconductor layer, a second interface layer, and a second conductive layer; wherein the semiconductor layer comprises silicon doped with both carbon and nitrogen; and a second electrode layer, wherein the first electrode layer comprises tungsten.

15 . The nonvolatile memory cell as in claim 14 , wherein a thickness of the semiconductor layer is between about 10 nm and about 40 nm.

16 . The nonvolatile memory cell as in claim 14 , wherein a concentration of carbon in the semiconductor layer is between about 0.1 atomic % and about 25 atomic %.

17 . The nonvolatile memory cell as in claim 14 , wherein a concentration of nitrogen in the semiconductor layer is between about 0.1 atomic % and about 25 atomic %.

18 . The nonvolatile memory cell as in claim 13 , wherein a thickness of each of the first conductive layer and the second conductive layer is between about 10 nm and about 100 nm.

19 . The nonvolatile memory cell as in claim 13 , wherein a thickness of each of the first conductive layer and the second conductive layer is about 50 nm.

20 . The nonvolatile memory cell as in claim 1 , wherein each of the first interface layer and the second interface layer comprises carbon.

Assignees

• Intermolecular Inc

Inventors

• Bodke Ashish
• Clark Mark
• Kashefi Kevin
• Phatak Prashant B
• Pramanik Dipankar

Classifications

• H01L27/2409 Primary

  Electricity · mapped topic

• H01L45/14

  Electricity · mapped topic

• H01L45/1253

  Electricity · mapped topic

• H01L45/149

  Electricity · mapped topic

• H01L45/145

  Electricity · mapped topic