Method for fabricating nonvolatile memory device
US-9224787-B2 · Dec 29, 2015 · US
Magnetoresistive element and magnetic memory
US2016148975A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016148975-A1 |
| Application number | US-201615010669-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 29, 2016 |
| Priority date | Aug 2, 2013 |
| Publication date | May 26, 2016 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (Mn x Ga y ) 100-z Co z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦10 atm %).
First claim
Opening claim text (preview).
1 . A magnetoresistive element comprising: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (Mn x Ga y ) 100-z Co z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦10 atm %). 2 . The magnetoresistive element according to claim 1 , wherein the third magnetic layer includes at least one of Co, Fe, and Ni. 3 . A magnetoresistive element comprising: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the first magnetic layer including (Mn x Ga y ) 100-z Al z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦40 atm %). 4 . The magnetoresistive element according to claim 3 , further comprising a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, or between the second magnetic layer and the first nonmagnetic layer. 5 . The magnetoresistive element according to claim 4 , wherein the third magnetic layer includes at least one of Co, Fe, and Ni. 6 . A magnetoresistive element comprising: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the first magnetic layer including (Mn x Ga y ) 100-z X z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦10 atm %), where X is at least one of Ir, Cr, Pt, Ru, Pd, Rh, Ni, Fe, Re, Au, and Cu. 7 . The magnetoresistive element according to claim 6 , wherein the (Mn x Ga y ) 100-z X z of the first magnetic layer corresponds to (Mn x Ga y ) 100-z X1 z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm<z≦10 atm %), where X1 is at least one of Ir, Pt, Ru, Pd, Rh, and Re. 8 . The magnetoresistive element according to claim 6 , wherein the (Mn x Ga y ) 100-z X z of the first magnetic layer corresponds to (Mn x Ga y ) 100-z Cr z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦10 atm %). 9 . The magnetoresistive element according to claim 6 , wherein the (Mn x Ga y ) 100-z X z of the first magnetic layer corresponds to (Mn x Ga y ) 100-z X2 z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦10 atm %), where X2 is at least one of Ni and Fe. 10 . The magnetoresistive element according to claim 6 , wherein the (Mn x Ga y ) 100-z X z of the first magnetic layer corresponds to (Mn x Ga y ) 100-z X3 z (45 atm %≦x≦75 atm %, 25 atm %≦y≦55 atm %, x+y=100 atm %, 0 atm %<z≦10 atm %), where X3 is at least one of Au and Cu. 11 . The magnetoresistive element according to claim 6 , further comprising a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, or between the second magnetic layer and the first nonmagnetic layer. 12 . The magnetoresistive element according to claim 11 , wherein the third magnetic layer includes at least one of Co, Fe, and Ni. 13 . A magnetic memory comprising: the magnetoresistive element according to claim 1 ; a first wiring line electrically connected to the first magnetic layer of the magnetoresistive element; and a second wiring line electrically connected to the second magnetic layer of the magnetoresistive element.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L27/228Primary
Electricity · mapped topic
Materials of the active region · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016148975A1 cover?
- A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (Mn x Ga y ) 100-z Co z (45 atm %≦x≦75 atm %, 2…
- Who is the assignee on this patent?
- Toshiba Kk, Univ Tohoku Nat Univ Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L27/228. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).