Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device

US2016147155A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016147155-A1
Application numberUS-201615011863-A
CountryUS
Kind codeA1
Filing dateFeb 1, 2016
Priority dateAug 1, 2013
Publication dateMay 26, 2016
Grant date

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  5. First independent claim

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Abstract

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There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.

First claim

Opening claim text (preview).

What is claimed is: 1 . A pattern formation method, comprising: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having a repeating unit represented by General Formula (I), a repeating unit represented by any one of General Formulas (II) to (IV), and a repeating unit represented by General Formula (V), wherein, in General Formula (I), each of R 41 , R 42 , and R 43 independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group; here, R 42 may be bonded to Ar 4 to form a ring, and R 42 in this case represents a single bond or an alkylene group; X 4 represents a single bond, —COO—, or —CONR 44 —, and, in the case of forming a ring with R 42 , represents a trivalent connecting group; R 44 represents a hydrogen atom or an alkyl group; L 4 represents a single bond or an alkylene group; Ar 4 represents an (n+1) valent aromatic ring group, and, in the case of being bonded to R 42 to form a ring, represents an (n+2) valent aromatic ring group; and n represents an integer of 1 to 4, wherein, in Formula (II), each of R 61 , R 62 , and R 63 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group; here, R 62 may be bonded to Ar 6 to form a ring, and R 62 in this case represents a single bond or an alkylene group; X 6 represents a single bond, —COO—, or —CONR 64 —; R 64 represents a hydrogen atom or an alkyl group; L 6 represents a single bond or an alkylene group; Ar 6 represents a divalent aromatic ring group, and, in the case of being bonded to R 62 to form a ring, represents a trivalent aromatic ring group; and Y 2 represents a group leaving due to the action of an acid; in Formula (III), each of R 51 , R 52 , and R 53 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group; R 52 may be bonded to L 5 to form a ring, and R 52 in this case represents an alkylene group; L 5 represents a single bond or a divalent connecting group, and in the case of being bonded to R 52 to form a ring, represents a trivalent connecting group; R 54 represents an alkyl group, and each of R 55 and R 56 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; R 55 to R 56 may be bonded to each other to form a ring; however, R 55 and R 56 do not represent a hydrogen atom at the same time in any case; and in Formula (IV), each of R 71 , R 72 , and R 73 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group; R 72 may be bonded to L 7 to form a ring, and R 72 in this case represents an alkylene group; L 7 represents a single bond or a divalent connecting group, and in the case of forming a ring with R 72 , represents a trivalent connecting group; R 74 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group, or a heterocyclic group; M 4 represents a single bond or a divalent connecting group; Q 4 represents an alkyl group, a cycloalkyl group, an aryl group, or a heterocyclic group; and at least two of Q 4 , M 4 , and R 74 may be bonded to each other to form a ring, and wherein, in Formula (V), each of R 81 , R 82 , and R 83 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group; here, R 82 may be bonded to L 8 to form a ring, and R 82 in this case represents a single bond or an alkylene group; X 8 represents a single bond or a divalent connecting group; L 8 represents a single bond or an (s+1) valent connecting group, and in the case of being bonded to R 82 to form a ring, represents an (s+2) valent connecting group; s represents an integer of 1 to 5; here, in a case where L 8 is a single bond, s is 1; and B 8 represents a group containing a cross-linking group. 2 . The pattern formation method according to claim 1 , wherein a cross-linking group included in B 8 in General Formula (V) is a hydroxymethyl group, an alkoxymethyl group, an oxirane ring, or an oxetane ring. 3 . The pattern formation method according to claim 1 , wherein B 8 in General Formula (V) is a group which has a phenol structure, a urea structure, or a melamine structure, having a hydroxymethyl group or an alkoxymethyl group. 4 . The pattern formation method according to claim 3 , wherein B 8 in General Formula (V) is a group which has a phenol structure having a hydroxymethyl group or an alkoxymethyl group (here, the hydroxymethyl group is not directly bonded to a nitrogen atom, and the alkoxymethyl group is not directly bonded to a nitrogen atom). 5 . The pattern formation method according to claim 1 , wherein the content of the repeating unit represented by General Formula (V) is 1 mol % to 20 mol % with respect to the entirety of repeating units in the resin (A). 6 . The pattern formation method according to claim 1 , wherein the resin (A) has the repeating unit represented by General Formula (II), and the repeating unit represented by General Formula (II) is a repeating unit represented by General Formula (II′), and wherein, in General Formula (II′), R 61 , R 62 , R 63 , X 6 , L 6 , and Ar 6 have the same meaning as those in General Formula (II), respectively; R 3 represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group, or a heterocyclic group; M 3 represents a single bond or a divalent connecting group; Q 3 represents an alkyl group, a cycloalkyl group, an aryl group, or a heterocyclic group; and at least two of Q 3 , M 3 , and R 3 may be bonded to each other to form a ring. 7 . The pattern formation method according to claim 6 , wherein R 3 in General Formula (II′) is a group having 2 or more carbon atoms. 8 . The pattern formation method according to claim 7 , wherein R 3 in General Formula (II′) is a group represented by the following General Formula (II-2), and wherein, in General Formula (II-2), each of R 81 , R 82 , and R 83 independently represents an alkyl group, an alkenyl group, a cycloalkyl group, or an aryl group; n81 represents 0 or 1; and at least two of R 81 to R 83 may be connected to each other to form a ring. 9 . The pattern formation method according to claim 1 , wherein the resin (A) has the repeating unit represented by General Formula (III), and the repeating unit represented by General Formula (III) is a repeating unit represented by General Formula (III-1), and wherein, in General Formula (III-1), each of R 1 and R 2 independently represents an alkyl group, each of R 11 and R 12

Assignees

Inventors

Classifications

  • with ethylenic or acetylenic bands in the side chains of the photopolymer · CPC title

  • the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

  • containing two or more rings · CPC title

  • Oxygen · CPC title

  • the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

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What does patent US2016147155A1 cover?
There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A…
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification G03F7/325. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu May 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).