Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same

Patent metadata

Field	Value
Publication number	US-2016147152-A1
Application number	US-201414904316-A
Country	US
Kind code	A1
Filing date	Jul 16, 2014
Priority date	Jul 23, 2013
Publication date	May 26, 2016
Grant date	—

Abstract

An additive for a resist underlayer film-forming composition that modifies a surface state of a resist underlayer film into a hydrophobic state to enhance adhesion between the resist underlayer film and a resist pattern formed on the resist underlayer film, and a resist underlayer film-forming composition containing the additive. An additive for a resist underlayer film-forming composition including a polymer having a structural unit of Formula (1):

(wherein R1 is a hydrogen atom or methyl group, L is a single bond or a divalent linking group, and X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group). A resist underlayer film-forming composition for lithography including a resin binder, an organic solvent, and the additive.

First claim

1 . An additive for a resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1):

(wherein R 1 is a hydrogen atom or methyl group, L is a single bond or a divalent linking group, and X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group).

2 . The additive for a resist underlayer film-forming composition according to claim 1 , wherein the polymer is a copolymer further having one or more structural units of Formula (2):

(wherein R 2 is a hydrogen atom or methyl group, M is a single bond or a linking group containing at least one selected from the group consisting of a —C(═O)— group, a —CH 2 — group, and a —O— group, and Y is a C 2-6 alkyl group in which at least one hydrogen atom is substituted by a fluorine atom, or a C 1-6 alkyl group having at least one hydroxy group, alkoxy group, or carboxyl group).

3 . The additive for a resist underlayer film-forming composition according to claim 1 , wherein the divalent linking group contains at least one selected from the group consisting of a —C(═O)— group, a —CH 2 — group, a —O— group, and a phenylene group.

4 . A resist underlayer film-forming composition for lithography comprising a resin binder, an organic solvent, and the additive for a resist underlayer film-forming composition according to claim 1 .

5 . The resist underlayer film-forming composition for lithography according to claim 4 , wherein the polymer or the copolymer in the additive for a resist underlayer film-forming composition is contained in an amount of 0.1% by mass to 30% by mass relative to a solid content of the resist underlayer film-forming composition obtained by removing the organic solvent.

6 . The resist underlayer film-forming composition for lithography according to claim 4 , further comprising a cross-linking agent and a cross-linking catalyst.

7 . A method for producing a semiconductor element, wherein the resist underlayer film-forming composition according to claim 4 , is applied onto a substrate having a film to be processed to form a transferred pattern and the resist underlayer film-forming composition is baked to form a resist underlayer film, the resist underlayer film is coated with a resist, the substrate coated with the resist is irradiated with a radiation selected from the group consisting of a KrF excimer laser, an ArF excimer laser, an extreme ultraviolet light, and an electron beam, and the resist is developed to form a resist pattern and dry-etched using the resist pattern as a mask to transfer the pattern onto the substrate.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Fujitani Noriaki
• Endo Takafumi
• Ohnishi Ryuji
• Sakamoto Rikimaru

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title