Semiconductor devices and methods of manufacturing
US-12166025-B2 · Dec 10, 2024 · US
US2016141197A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016141197-A1 |
| Application number | US-201414891865-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 22, 2014 |
| Priority date | May 31, 2013 |
| Publication date | May 19, 2016 |
| Grant date | — |
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Provided is a method of peeling an electronic member from a laminate composed of the electronic member adhered to a supporting substrate via an adhesive film having a self-peeling adhesive layer in a defined location and having an exposed region A. The method includes the steps of: reducing adhesive strength between the supporting substrate and the self-peeling adhesive layer in the region A by applying energy on the region A; removing the supporting substrate from the laminate by further applying energy on the region and thus further reducing the adhesive strength reduced in the prior step between the supporting substrate and the self-peeling adhesive layer from a starting point of the interface between the supporting substrate and the self-peeling adhesive layer; and peeling the electronic member from the laminate by removing the adhesive film from the electronic member.
Opening claim text (preview).
1 . A method of peeling an electronic member (c) from a laminate composed of the electronic member (c) adhered to a supporting substrate (a) via an adhesive film (b), said adhesive film (b) having a self-peeling adhesive layer on a surface thereof located on the side of said supporting substrate (a) and an exposed region in at least one part of a surface thereof which is located on the side of said electronic member (c), the method comprising: a step of reducing adhesive strength between said supporting substrate (a) and said self-peeling adhesive layer by applying energy on said exposed region; a step of removing said supporting substrate (a) from the laminate by further applying energy on said region and thus further reducing the adhesive strength reduced in said prior step between said supporting substrate (a) and said self-peeling adhesive layer from a starting point of the interface between said supporting substrate (a) and said self-peeling adhesive layer; and a step of peeling said electronic member (c) from the laminate by removing said adhesive film (b) from said electronic member (c). 2 . A method of peeling an electronic member according to claim 1 , wherein said energy is any one selected from heat, light, vibration, stress and ultrasonic waves. 3 . A method of peeling an electronic member according to claim 1 , wherein said exposed region in which said adhesive film (b) is exposed exists along the entire outer edge of said electronic member (c). 4 . A method of peeling an electronic member according to claim 1 , wherein said electronic member (c) is a silicon wafer, a ceramic capacitor or a semiconductor package. 5 . A laminate comprising: a supporting substrate (a); an adhesive film (b); and an electronic member (c) adhered to said supporting substrate (a) via said adhesive film (b), wherein said adhesive film (b) has a self-peeling adhesive layer on a surface thereof which is located on the side of said supporting substrate (a) and an exposed region in at least one part of a surface thereof which is located on the side of said electronic member (c).
Separation by peeling · CPC title
used during dicing or grinding · CPC title
the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title
Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title
the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title
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