Slurry compositions and methods of fabricating semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-2016141182-A1
Application number	US-201514886161-A
Country	US
Kind code	A1
Filing date	Oct 19, 2015
Priority date	Nov 14, 2014
Publication date	May 19, 2016
Grant date	—

Abstract

Provided are slurry compositions for polishing a germanium-containing layer and methods of fabricating a semiconductor device using the same. The slurry composition may include a polishing particle, an oxidizing agent, a polishing accelerator, and a selectivity control agent. The oxidizing agent may include at least one selected from the group consisting of superoxide, dioxygenyl, ozone, ozonide, chlorite, chlorate, perchlorate, halogen compounds, nitric acid, nitrate, hypochlorite, hypohalite, and peroxide.

First claim

What is claimed is:

1 . A slurry composition for polishing a germanium-containing layer, comprising:
a polishing particle; an oxidizing agent comprising at least one selected from the group consisting of superoxide, dioxygenyl, ozone, ozonide, chlorite, chlorate, perchlorate, halogen compounds, nitric acid, nitrate, hypochlorite, hypohalite, and peroxide; a polishing accelerator; and a selectivity control agent.

2 . The slurry composition of claim 1 , wherein the polishing particle comprises at least one of silica (SiO 2 ), ceria (CeO 2 ), and aluminum (Al 2 O 3 ).

3 . The slurry composition of claim 1 , wherein the polishing particle has a size in a range of 30 nm to 80 nm.

4 . The slurry composition of claim 1 , wherein the polishing accelerator comprises an organic acid.

5 . The slurry composition of claim 4 , wherein the polishing accelerator comprises at least one selected the group consisting of acetic acid, citric acid, formic acid, gluconic acid, lactic acid, oxalic acid, tartaric acid, and carboxylic acid.

6 . The slurry composition of claim 1 , wherein the selectivity control agent comprises a material allowing the germanium-containing layer to have a higher polishing rate than that of a layer containing at least one of silicon, oxide, and nitride.

7 . The slurry composition of claim 6 , wherein the selectivity control agent comprises at least one of pyrrolid one-based polymers, glycol-based polymers, oxide-based polymers, and acrylate-based polymers.

8 . The slurry composition of claim 6 , wherein the selectivity control agent comprises at least one of poly(vinylpyrrolidone) (PVP) and polyethylene glycol (PEG), when the germanium-containing layer is polished along with a silicon-containing layer.

9 . The slurry composition of claim 6 , wherein the selectivity control agent comprises poly(ethylene oxide) (PEO), when the germanium-containing layer is polished along with an oxide-containing layer.

10 . The slurry composition of claim 6 , wherein the selectivity control agent comprises poly(acrylic acid) (PAA), when the germanium-containing layer is polished along with a nitride-containing layer.

11 . The slurry composition of claim 1 , further comprising a pH modifier.

12 . The slurry composition of claim 11 , wherein the slurry composition has a pH value in a range of 3 to 7.

13 . The slurry composition of claim 11 , wherein the pH modifier comprises at least one of nitric acid, sulfuric acid, hydrochloric acid, and acetic acid.

14 . A method of fabricating a semiconductor device, comprising:
forming a silicon-containing NMOS region and a germanium-containing PMOS region on a silicon-containing substrate; and polishing the germanium-containing PMOS region using the slurry composition of claim 1 to have a top surface coplanar with that of the silicon-containing NMOS region.

15 . The method of claim 14 , wherein the forming of the silicon-containing NMOS region and the germanium-containing PMOS region on the silicon-containing substrate comprises:
forming a mask pattern on a silicon-containing initial substrate; etching the silicon-containing initial substrate using the mask pattern to form a recess; and forming the germanium-containing PMOS region to fill the recess.

16 . A composition comprising:
a polishing particle; an oxidizing agent; a polishing accelerator; and a selectivity control agent, wherein the composition is in the form of a slurry and has a pH value in a range of 3 to 7.

17 . The composition of claim 16 , wherein the polishing particle has a size in a range of 30 nm to 80 nm.

18 . The composition of claim 16 , wherein the polishing accelerator comprises an organic acid.

19 . The composition of claim 16 , wherein the selectivity control agent is selected from the group consisting of poly(vinylpyrrolidone) (PVP), polyethylene glycol, (PEG), poly(ethylene oxide) (PEO), poly(acrylic acid) (PAA), and any combination thereof.

20 . The composition of claim 16 , wherein the composition, when used in a polishing process, provides a polishing rate for a germanium-containing layer in a range of about 1,600 Å/min to about 3,000 Å/min and/or a polishing rate for a layer containing silicon, oxide, and/or nitride in a range of about 10 Å/min to about 50 Å/min.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Sangkyun
• Kim Yun-Jeong
• Park Sanghyun
• Park Se Jung
• Choi Bo Hyeok

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D30/751

  having composition variations in the channel regions · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title