Apparatus with data-rate-based voltage control mechanism and methods for operating the same
US-2024221813-A1 · Jul 4, 2024 · US
US2016141015A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016141015-A1 |
| Application number | US-201514837294-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 27, 2015 |
| Priority date | Nov 14, 2014 |
| Publication date | May 19, 2016 |
| Grant date | — |
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A memory device may include a power-up control circuit and a first set of boost voltage generators. The power-up control circuit may be configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up. The first set of boost voltage generators may be configured to generate an internal boost voltage based on an external boost voltage and the first set of power-up signals. The first set of boost voltage generators may be configured to activate before the reset signal transitions from the first logic level to a second logic level opposite to the first logic level.
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What is claimed is: 1 . A memory device comprising: a power-up control circuit configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up; and a first set of boost voltage generators configured to generate an internal boost voltage based on an external bo…
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