Memory device including power-up control circuit, and memory system having the same

US2016141015A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016141015-A1
Application numberUS-201514837294-A
CountryUS
Kind codeA1
Filing dateAug 27, 2015
Priority dateNov 14, 2014
Publication dateMay 19, 2016
Grant date

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  2. Abstract

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  5. First independent claim

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Abstract

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A memory device may include a power-up control circuit and a first set of boost voltage generators. The power-up control circuit may be configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up. The first set of boost voltage generators may be configured to generate an internal boost voltage based on an external boost voltage and the first set of power-up signals. The first set of boost voltage generators may be configured to activate before the reset signal transitions from the first logic level to a second logic level opposite to the first logic level.

First claim

Opening claim text (preview).

What is claimed is: 1 . A memory device comprising: a power-up control circuit configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up; and a first set of boost voltage generators configured to generate an internal boost voltage based on an external bo…

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What does patent US2016141015A1 cover?
A memory device may include a power-up control circuit and a first set of boost voltage generators. The power-up control circuit may be configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an in…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification G11C11/4074. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu May 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).