Receiver, operation method thereof, and memory device
US-2024412764-A1 · Dec 12, 2024 · US
US2016141014A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016141014-A1 |
| Application number | US-201615004060-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 22, 2016 |
| Priority date | Jun 29, 2012 |
| Publication date | May 19, 2016 |
| Grant date | — |
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A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.
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1 - 16 . (canceled) 17 . A semiconductor integrated circuit including at least one master chip and at least one slave chip that are stacked, the master chip being configured to transmit write data inputted from an outside, to the slave chip in a DDR scheme based on a first internal strobe signal, transmit write strobe signals that are source-synchronized with the write data transmitted in the DDR scheme, to the slave chip based on the first internal strobe signal, and rece…
Physics · mapped topic
Physics · mapped topic
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