Micro-electromechanical apparatus with multiple chambers and method for manufacturing the same

US2016137491A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016137491-A1
Application numberUS-201514588983-A
CountryUS
Kind codeA1
Filing dateJan 5, 2015
Priority dateNov 13, 2014
Publication dateMay 19, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A micro-electromechanical apparatus with multiple chambers and a method for manufacturing the same are provided, wherein various micro-electromechanical sensors are integrated into a single apparatus. For example, the micro-electromechanical apparatus in this disclosure may have two independent hermetically sealed chambers with different pressures, such that a micro-electromechanical barometer and a micro-electromechanical accelerometer can be operated in an optimal pressure circumstance.

First claim

Opening claim text (preview).

1 . A micro-electromechanical apparatus, being adapted to measuring a pressure and an inertial physical quantity, the micro-electromechanical apparatus comprising: a substrate, having a first surface; a first cover, disposed on the substrate, wherein the first cover and the substrate define a first hermetically sealed chamber; a sensing unit, comprising a movable mass suspended over the substrate; and a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber, wherein the sensing unit is enclosed by the first hermetically sealed chamber and is disposed outside the second hermetically sealed chamber. 2 . The micro-electromechanical apparatus of claim 1 , wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber. 3 . The micro-electromechanical apparatus of claim 2 , wherein a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover. 4 . The micro-electromechanical apparatus of claim 3 , wherein the substrate further comprises a film and a through hole, an upper surface of the film is electrical conductive and exposed in the second hermetically sealed chamber, and a lower surface of the film covers the through hole. 5 . The micro-electromechanical apparatus of claim 4 , wherein the substrate further comprises: a semiconductor layer, disposed on the first surface; a first electrical insulation layer, covering the semiconductor layer; an electrical conductive layer, disposed on the first electrical insulation layer; a second electrical insulation layer, covering the electrical conductive layer; and a stationary electrode, disposed on the second electrical insulation layer. 6 . The micro-electromechanical apparatus of claim 5 , wherein the film comprises: a portion of the electrical conductive layer, exposed in the second hermetically sealed chamber; a portion of the semiconductor layer, covering the through hole; and a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer. 7 . The micro-electromechanical apparatus of claim 6 , wherein a material of the stationary electrode comprises copper, and a material of the electrical conductive layer comprises poly-silicon. 8 . The micro-electromechanical apparatus of claim 4 , wherein the second cover, the film and the second hermetically sealed chamber are adapted to measuring a gas pressure. 9 . The micro-electromechanical apparatus of claim 1 , wherein the sensing unit comprises at least one of an accelerometer, a gyroscope, and an oscillator. 10 . A micro-electromechanical apparatus, comprising: a substrate, having a first surface; a first cover, disposed on the substrate, wherein the first cover and the substrate define a first hermetically sealed chamber; and a sensing unit, comprising a movable mass suspended over the substrate; a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber, wherein the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, and a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber. 11 . The micro-electromechanical apparatus of claim 10 , wherein a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover. 12 . The micro-electromechanical apparatus of claim 11 , wherein the substrate further comprises a film and a through hole, an upper surface of the film is electrical conductive and exposed in the second hermetically sealed chamber, and a lower surface of the film covers the through hole. 13 . The micro-electromechanical apparatus of claim 12 , wherein the substrate further comprises: a semiconductor layer, disposed on the first surface; a first electrical insulation layer, covering the semiconductor layer; an electrical conductive layer, disposed on the first electrical insulation layer; a second electrical insulation layer, covering the electrical conductive layer; and a stationary electrode, disposed on the second electrical insulation layer. 14 . The micro-electromechanical apparatus of claim 13 , wherein the film comprises: a portion of the electrical conductive layer, exposed in the second hermetically sealed chamber; a portion of the semiconductor layer, covering the through hole; and a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer. 15 . A micro-electromechanical apparatus, comprising: a substrate, having a first surface; a first cover, disposed on the substrate, wherein the first cover and the substrate define a first hermetically sealed chamber; a sensing unit, comprising a movable mass suspended over the substrate; and a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber, wherein the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover. 16 . The micro-electromechanical apparatus of claim 15 , wherein the substrate further comprises a film and a through hole, an upper surface of the film is electrically electrical conductive and exposed in the second hermetically sealed chamber, and a lower surface of the film covers the through hole. 17 . The micro-electromechanical apparatus of claim 16 , wherein the substrate further comprises: a semiconductor layer, disposed on the first surface; a first electrical insulation layer, covering the semiconductor layer; an electrical conductive layer, disposed on the first electrical insulation layer; a second electrical insulation layer, covering the electrical conductive layer; and a stationary electrode, disposed on the second electrical insulation layer. 18 . The micro-electromechanical apparatus of claim 17 , wherein the film comprises: a portion of the electrical conductive layer, exposed in the second hermetically sealed chamber; a portion of the semiconductor layer, covering the through hole; and a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer. 19 . A micro-electromechanical apparatus, comprising: a substrate, having a first surface, comprising: a film; and a through hole; a first cover, disposed on the substrate, wherein the first cover and the substrate define a first hermetically sealed chamber; a sensing un

Assignees

Inventors

Classifications

  • Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

  • Bonding an individual cap on the substrate · CPC title

  • Accelerometers · CPC title

  • Pressure sensors · CPC title

  • Electrodes · CPC title

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What does patent US2016137491A1 cover?
A micro-electromechanical apparatus with multiple chambers and a method for manufacturing the same are provided, wherein various micro-electromechanical sensors are integrated into a single apparatus. For example, the micro-electromechanical apparatus in this disclosure may have two independent hermetically sealed chambers with different pressures, such that a micro-electromechanical barometer …
Who is the assignee on this patent?
Ind Tech Res Inst
What technology area does this patent fall under?
Primary CPC classification B81B7/02. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu May 19 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).