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Plasma processing apparatus and plasma processing method
US2016133530A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016133530-A1 |
| Application number | US-201514625931-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 19, 2015 |
| Priority date | Nov 11, 2014 |
| Publication date | May 12, 2016 |
| Grant date | — |
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- Title
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Abstract
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A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.
First claim
Opening claim text (preview).
1 . A plasma processing apparatus comprising: a processing chamber configured to perform plasma processing on a sample; a first radio frequency power supply configured to supply radio frequency power to generate a plasma in the processing chamber; a sample stage configured to place the sample thereon; a second radio frequency power supply configured to supply radio frequency power to the sample stage; a mass flow controller configured to supply a gas into the processing chamber; and a control device configured to control the first radio frequency power supply or the second radio frequency power supply to change the radio frequency power supplied from the first radio frequency power supply or the radio frequency power supplied from the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas. 2 . The plasma processing apparatus according to claim 1 , wherein the change of the plasma impedance is detected using a change in a peak-to-peak voltage of the radio frequency power supplied from the second radio frequency power supply. 3 . The plasma processing apparatus according to claim 1 , wherein the change of the plasma impedance is detected using a change in a peak-to-peak voltage of the radio frequency power supplied from the first radio frequency power supply. 4 . The plasma processing apparatus according to claim 1 , wherein the change of the plasma impedance is detected using a reflected wave of the radio frequency power supplied from the second radio frequency power supply. 5 . The plasma processing apparatus according to claim 1 , wherein the change of the plasma impedance is detected using a reflected wave of the radio frequency power supplied from the first radio frequency power supply. 6 . A plasma processing method which performs plasma processing on a sample while periodically switching between a first gas and a second gas, comprising the steps of detecting a change of plasma impedance after switching from the first gas to the second gas; and changing a radio frequency power supplied to a sample stage on which the sample is placed or a radio frequency power for generating a plasma after detecting the change of the plasma impedance.
Assignees
Inventors
Classifications
of Group IV materials · CPC title
- H10P50/691Primary
for Group V materials or Group III-V materials · CPC title
- H05H1/46Primary
using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title
Means for coupling power to the plasma · CPC title
Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence) · CPC title
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- What does patent US2016133530A1 cover?
- A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas int…
- Who is the assignee on this patent?
- Hitachi High Tech Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/691. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).