Vapor phase growth apparatus, storage container, and vapor phase growth method

Patent metadata

Field	Value
Publication number	US-2016133457-A1
Application number	US-201514930975-A
Country	US
Kind code	A1
Filing date	Nov 3, 2015
Priority date	Nov 7, 2014
Publication date	May 12, 2016
Grant date	—

Abstract

A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

First claim

What is claimed is:

1 . A vapor phase growth apparatus comprising:
a reaction chamber; a storage container storing organic metal; a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid; a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container; an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas; and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

2 . The vapor phase growth apparatus according to claim 1 ,
wherein the diluent gas transportation path is connected to the organic-metal-containing gas transportation path in the liquid.

3 . The vapor phase growth apparatus according to claim 1 ,
wherein the liquid is pure water or a fluorine-based fluid.

4 . The vapor phase growth apparatus according to claim 1 ,
wherein the organic metal is trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), or bis(cyclopentadienyl)magnesium (Cp 2 Mg).

5 . The vapor phase growth apparatus according to claim 1 ,
wherein the temperature of the liquid is equal to or higher than 30° C. and equal to or lower than 60° C.

6 . The vapor phase growth apparatus according to claim 1 ,
wherein the carrier gas is a hydrogen gas.

7 . A storage container comprising:
a container portion capable of storing organic metal; a first pipe connecting the inside and outside of the container portion and having a first valve provided outside the container portion; a second pipe connecting the inside and the outside of the container portion and having a second valve provided outside the container portion; and a third pipe having a third valve provided outside the container portion and connected to the second pipe.

8 . The storage container according to claim 7 ,
wherein the third pipe is connected between the container portion and the second valve.

9 . The storage container according to claim 7 ,
wherein the first valve the second valve, and the third valve are manual valves.

10 . The storage container according to claim 7 ,
wherein the organic meta is trimethylgallium (TMG), trimethylaluminum (TMA) trimethylindium (TMI), or bis(cyclopentadienyl)magnesium (Cp 2 Mg).

11 . A vapor phase growth method comprising:
loading a substrate to a reaction chamber; bubbling or sublimating organic metal stored in a storage container with a carrier gas to generate an organic-metal-containing gas, the storage container being immersed in a liquid with a predetermined temperature higher than a room temperature; diluting the organic-metal-containing gas with a diluent gas at a position below a liquid level of the liquid; and supplying the diluted organic-metal-containing gas to the reaction chamber to form a semiconductor film on a surface of the substrate.

12 . The vapor phase growth method according to claim 11 ,
wherein the liquid is pure water or a fluorine-based fluid.

13 . The vapor phase growth method according to claim 11 ,
wherein the organic meta is trimethylgaium (TMG) trimethylaluminum (TNA) trimethylindium (TMI), or bis(cyclopentadienyl) magnesium (Cp 2 Mg).

14 . The vapor phase growth method according to claim 11 ,
wherein the temperature of the liquid is equal to or higher than 30° C. and equal to or lower than 60° C.

15 . The vapor phase growth method according to claim 11 ,
wherein the carrier gas is a hydrogen gas.

Assignees

• Nuflare Technology Inc

Inventors

• Takahashi Hideshi
• Sato Yuusuke

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• C30B29/406

  Gallium nitride · CPC title

• C30B25/10

  Heating of the reaction chamber or the substrate · CPC title