Combinatorial screening of metallic diffusion barriers
US-2015338362-A1 · Nov 26, 2015 · US
US2016130694A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016130694-A1 |
| Application number | US-201514589815-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 5, 2015 |
| Priority date | Nov 11, 2014 |
| Publication date | May 12, 2016 |
| Grant date | — |
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An article includes a substrate, a Ti-bottom layer deposited on the substrate and a TiN/TiC coating deposited on the Ti-bottom layer. The TiN/TiC coating includes a plurality of TiN-nano layers and a plurality of TiC-nano layers. Each TiN-nano layer and each TiC-nano layers are alternately deposited on the Ti-bottom layer. The TiN/TiC coating has good toughness and high hardness. A method for manufacturing the TiN/TiC coating is also provided.
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What is claimed is: 1 . A TiN/TiC coating comprising: a plurality of TiN-nano layers; and a plurality of TiC-nano layers; wherein the TiN/TiC coating is a multi-layer composite coating formed by alternate deposition of TiN-nano layers and TiC-nano layers. 2 . The TiN/TiC coating as claimed in claim 1 , wherein the adjacent TiN-nano layer and TiC-nano layer form a two-layer unit, and the thickness of the TiN-nano layer ranges from 10 nm to 60 nm and the thickness of the TiC-nano layer ranges from 10 nm to 80 nm in each two-layer unit. 3 . The TiN/TiC coating as claimed in claim 2 , wherein the thickness of the TiN-nano layer and the thickness of the TiC-nano layer is 50 nm in each two-layer unit. 4 . The TiN/TiC coating as claimed in claim 1 , wherein the TiN/TiC coating can be total 20 layers of coating each layer being made up of the TiN-nano layer and the TiC-nano layer. 5 . The TiN/TiC coating as claimed in claim 1 , wherein the total thickness of the TiN/TiC coating is 1 μm. 6 . The TiN/TiC coating as claimed in claim 1 , wherein the microhardness of the TiN/TiC coating is more than 40 GPa. 7 . A method for manufacturing a TiN/TiC coating, the method comprising: providing a substrate in a coating device; and forming a multi-layer composite coating by alternately sputtering a TiN-nano layer and a TiC-nano layer on the substrate; wherein the TiN-nano layer is formed by sputtering Ti targets in the argon gas and the nitrogen gas; and the TiC-nano layer is formed by sputtering TiC targets in the argon gas. 8 . The method as claimed in claim 7 , wherein the sputtering conditions for forming the TiN-nano layers are as follows: a power of Ti targets is adjusted to 5000-14000 W, a nitrogen flow rate is 200-300 mln/min, an argon flow rate is 300-500 mln/min, a pressure in the coating device is 400-600 MPa, a temperature of the coating device is 400-600° C., a voltage of the ion source is 50-100V, a biased voltage of the substrate can be 50-1000V, and a sputtering time is 100-500 seconds. 9 . The method as claimed in claim 7 , wherein the sputtering conditions for forming the TiC-nano layers are as follows: a power of TiC targets is adjusted to 5000-14000 W, an argon flow rate is 300-500 mln/min, a pressure in the coating device is 300-500 MPa, a temperature of the coating device is 400-600° C., a voltage of the ion source is 50-100V, a biased voltage of the substrate can be 50-100V, and a sputtering time is 300-1000 seconds. 10 . The method as claimed in claim 7 , wherein a Ti-bottom layer is sputtered on the substrate before forming the multi-layer composite coating. 11 . The method as claimed in claim 10 , wherein the sputtering conditions for forming the Ti-bottom layer are as follows: a power of Ti targets is 500-1000 W, an argon flow rate and an krypton flow rate are 200-300 mln/min, a pressure in the coating device is 200-500 MPa, a temperature of the coating device is 400-600° C., a voltage of the ion source is 50-100V, and a biased voltage of the substrate can be 50-1000V, and a sputtering time is 200-1000 seconds. 12 . An article comprising: a substrate; and a TiN/TiC coating deposited on the substrate; wherein the TiN/TiC coating is a multi-layer composite coating formed by alternate deposition of a plurality of TiN-nano layers and a plurality of TiC-nano layers. 13 . The article as claimed in claim 12 , wherein a Ti-bottom layer is formed between the TiN/TiC coating and the substrate. 14 . The article as claimed in claim 12 , wherein the adjacent TiN-nano layer and TiC-nano layer form a two-layer unit, and the thickness of the TiN-nano layer ranges from 10 nm to 60 nm and the thickness of the TiC-nano layer ranges from 10 nm to 80 nm in each two-layer unit. 15 . The article as claimed in claim 12 , wherein the thickness of the TiN-nano layer and the thickness of the TiC-nano layer is 50 nm in each two-layer unit. 16 . The article as claimed in claim 12 , wherein the TiN/TiC coating can be total 20 layers of coating each layer being made up of the TiN-nano layer and the TiC-nano layer, and the total thickness of the TiN/TiC coating is 1 μm. 17 . The article as claimed in claim 12 , wherein the microhardness of the TiN/TiC coating is more than 40 GPa.
using more than one target (C23C14/56 takes precedence) · CPC title
Variation of parameters during sputtering · CPC title
Nitrides (C23C14/0617 takes precedence) · CPC title
Carbides · CPC title
Reactive sputtering · CPC title
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