Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device

Patent metadata

Field	Value
Publication number	US-2016126321-A1
Application number	US-201514926914-A
Country	US
Kind code	A1
Filing date	Oct 29, 2015
Priority date	Oct 31, 2014
Publication date	May 5, 2016
Grant date	—

Abstract

A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film provided on the upper side of the Si substrate and a second SiC film provided on the upper side of the first SiC film. The mask has a first mask provided on the Si substrate and including an opening (first opening) and a second mask provided on the first SiC film and including an opening (second opening). The width W 1 (μm) of the first opening and the thickness T 1 (μm) of the first mask satisfy the following relationship: T 1 <tan(54.6°)×W 1.

First claim

What is claimed is:

1 . A substrate with a silicon carbide film, comprising:
a silicon substrate; and a cubic silicon carbide film and a mask stacked on the silicon substrate, wherein the cubic silicon carbide film has a first cubic silicon carbide film provided on the upper side of the silicon substrate and a second cubic silicon carbide film provided on the upper side of the first cubic silicon carbide film, the mask has a first mask provided between the silicon substrate and the first cubic silicon carbide film and a second mask provided between the first cubic silicon carbide film and the second cubic silicon carbide film, the first mask includes a first opening, and the silicon substrate is exposed from the first opening, the second mask includes a second opening, and the first cubic silicon carbide film is exposed from the second opening, and when the width of the first opening is represented by W 1 (μm) and the thickness of the first mask is represented by T 1 (μm), the following relationship is satisfied: T 1 <tan(54.6°)×W 1 .

2 . The substrate with a silicon carbide film according to claim 1 , wherein the first mask and the second mask are placed at positions where they overlap each other in plan view.

3 . The substrate with a silicon carbide film according to claim 1 , wherein the width of the second opening is the same as or smaller than the width of the first opening.

4 . The substrate with a silicon carbide film according to claim 1 , wherein when the distance from the bottom surface of the first mask to the bottom surface of the second mask is represented by D 1 (μm), the following relationship is satisfied: D 1 ≧tan(54.6°)×W 1 .

5 . The substrate with a silicon carbide film according to claim 1 , wherein the surface of the silicon substrate on which the first cubic silicon carbide film is formed has a plane orientation of (100).

6 . The substrate with a silicon carbide film according to claim 1 , wherein
the cubic silicon carbide film further has a third cubic silicon carbide film provided on the upper side of the second cubic silicon carbide film, and the mask further has a third mask provided between the second cubic silicon carbide film and the third cubic silicon carbide film, and the third mask includes a third opening, and the second cubic silicon carbide film is exposed from the third opening.

7 . The substrate with a silicon carbide film according to claim 1 , wherein the first mask is provided on and in contact with the silicon substrate.

8 . A method for producing a substrate with a silicon carbide film, comprising:
a first step of forming a first film on a silicon substrate; a second step of forming a first opening for exposing the silicon substrate in the first film; a third step of forming a first cubic silicon carbide film to a predetermined thickness on the silicon substrate exposed in the first opening by epitaxial growth; a fourth step of forming a second film on the first cubic silicon carbide film; a fifth step of forming a second opening for exposing the first cubic silicon carbide film in the second film; and a sixth step of forming a second cubic silicon carbide film on the first cubic silicon carbide film exposed in the second opening by epitaxial growth, wherein when the thickness of the first film is represented by T 1 and the width of the first opening is represented by W 1 , the following relationship is satisfied: T 1 <tan(54.6°)×W 1 .

9 . The method for producing a substrate with a silicon carbide film according to claim 8 , wherein in the third step, when the predetermined thickness is represented by D 1 , the following relationship is satisfied: D 1 ≧tan(54.6°)×W 1 .

10 . The method for producing a substrate with a silicon carbide film according to claim 8 , wherein the upper surface of the silicon substrate has a plane orientation of (100).

11 . The method for producing a substrate with a silicon carbide film according to claim 8 , wherein
the width of the second opening is the same as or smaller than the width of the first opening, and the first opening and the second opening are placed at positions where they overlap each other when the silicon substrate is seen in plan view.

12 . The method for producing a substrate with a silicon carbide film according to claim 8 , wherein the method further comprises:
a seventh step of forming a third film on the second cubic silicon carbide film; an eighth step of forming a third opening for exposing the second cubic silicon carbide film in the third film; and a ninth step of forming a third cubic silicon carbide film on the second cubic silicon carbide film exposed from the third opening by epitaxial growth.

13 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 1 .

14 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 2 .

15 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 3 .

16 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 4 .

17 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 5 .

18 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 6 .

19 . A semiconductor device, wherein the semiconductor device is produced by using the substrate with a silicon carbide film according to claim 7 .

Assignees

• Seiko Epson Corp

Inventors

• Watanabe Yukimune

Classifications

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/3208

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title