Light-emitting diode module

Patent metadata

Field	Value
Publication number	US-2016126221-A1
Application number	US-201314436486-A
Country	US
Kind code	A1
Filing date	Oct 16, 2013
Priority date	Oct 24, 2012
Publication date	May 5, 2016
Grant date	—

Abstract

A light-emitting diode module for emitting white light includes a first light emitting diode chip for generating radiation in the blue spectral range having a first peak wavelength, a second light emitting diode chip for generating radiation in the blue spectral range having a second peak wavelength, a third light emitting diode chip for generating radiation in the red spectral range having a third peak wavelength, a first and a second phosphors disposed downstream of the first and the second light emitting diode chips, respectively. The first light emitting diode chip with the first phosphor generates a first mixed radiation and the second light emitting diode chip with the second phosphor generates a second mixed radiation. The first phosphor exhibits a first absorption maximum at a wavelength greater than the first peak wavelength. The second phosphor exhibits a second absorption maximum at a wavelength less than the second peak wavelength.

First claim

1 . A light-emitting diode module comprising;
at least one first light-emitting diode chip designed for generating radiation in the blue spectral range having a first peak wavelength, at least one second light-emitting diode chip designed for generating radiation in the blue spectral range having a second peak wavelength, at least one third light-emitting diode chip designed for generating radiation in the red spectral range having a third peak wavelength, a first phosphor disposed downstream of the first light-emitting diode chip, and a second phosphor disposed downstream of the second light-emitting diode chip,
wherein
the light-emitting diode module is designed for emitting white light,
the first light-emitting diode chip together with the first phosphor generates a first mixed radiation and the second light-emitting diode chip together with the second phosphor generates a second mixed radiation,
the first phosphor exhibits a first absorption maximum at a wavelength that is greater than the first peak wavelength, and
the second phosphor exhibits a second absorption maximum at a wavelength that is less than the second peak wavelength.

2 . The light-emitting diode module as claimed in claim 1 ,
wherein the first phosphor has a dominant emission wavelength of greater than 570 nm and the second phosphor has a dominant emission wavelength of less than 570 nm, wherein the first absorption maximum of the first phosphor is between 450 nm and 470 nm inclusive and the second absorption maximum of the second phosphor is between 425 nm and 442 nm inclusive, and wherein the first peak wavelength and the second peak wavelength are between 440 nm and 465 nm inclusive and the third peak wavelength is between 610 nm and 670 nm inclusive.

3 . The light-emitting diode module as claimed in claim 1 ,
wherein
a color locus of the first mixed radiation in the CIE standard chromaticity diagram is encompassed by a quadrilateral having the vertexes (0.32; 0.36), (0.48; (0.48), (0.40; 0.56) and (0.32; 0.40), wherein the vertexes are defined by the (c x ; c y ) values,
a color locus of the second mixed radiation in the CIE standard chromaticity diagram is encompassed by a quadrilateral having the vertexes (0.22; 0.20), (0.30; 0.40), (0.24; 0.46) and (0.18; 0.22), and
a mixed color locus from the mixed radiations is encompassed by a quadrilateral having the vertexes (0.34; 0.38), (0.42; 0.44), 0.38; 0.46) and (0.32; 0.42).

4 . The light-emitting diode module as claimed in claim 1 ,
wherein a higher radiation proportion of the first light-emitting diode chip is absorbed by the first phosphor in comparison with the radiation proportion of the second light-emitting diode chip that is absorbed by the second phosphor, such that the first mixed radiation has a smaller blue proportion than the second mixed radiation.

5 . The light-emitting diode module as claimed in claim 1 ,
wherein the first peak wavelength is less than the second peak wavelength, wherein a wavelength difference between the peak wavelengths is at least 6 nm and at most 18 nm.

6 . The light-emitting diode module as claimed in claim 1 ,
wherein the first peak wavelength is equal to the second peak wavelength, with a tolerance of at most 3 nm.

7 . The light-emitting diode module as claimed in claim 1 ,
wherein the second light-emitting diode chip is designed to be energized with at least 15% and with at most 60% of the current of the first light-emitting diode chip.

8 . The light-emitting diode module as claimed in claim 1 ,
wherein the light-emitting diode chips is energized variably, such that a color temperature of the white light emitted by the light-emitting diode module is tunable over a color temperature range of at least 1600 K.

9 . The light-emitting diode module as claimed in claim 1 ,
wherein that proportion of the luminous flux emitted by the light-emitting diode module which is generated by the third light-emitting diode chip is at least 3% and at most 20%.

10 . The light-emitting diode module as claimed in claim 1 ,
wherein the first phosphor is a Y 3 Al 5 O 12 :Ce or a Y 3 (Al,Ga) 5 O 12 :Ce.

11 . The light-emitting diode module as claimed in claim 1 ,
wherein the second phosphor is a Y 3 (Al,Ga) 5 O 12 :Ce, an (Lu,Y) 3 (Al,Ga) 5 O 12 :Ce, an Lu 3 (Al,Ga) 5 O 12 :Ce, an orthosilicate or a nitrido-orthosilicate.

12 . The light-emitting diode module as claimed in claim 1 ,
wherein a first scattering body is disposed downstream of the first and/or the second light-emitting diode chip, said first scattering body having a smaller scattering capability at a temperature of 300 K than at a temperature of 375 K, wherein the first scattering body comprises a matrix material and scattering particles embedded into the matrix material, and a refractive index difference between said matrix material and said scattering particles is smaller at a temperature of 300 K than at 375 K.

13 . The light-emitting diode module as claimed in claim 1 ,
wherein a second scattering body is disposed downstream of the third light-emitting diode chip, said second scattering body having a larger scattering capability at a temperature of 300 K than at a temperature of 375 K, wherein the second scattering body comprises a matrix material and scattering particles embedded into the matrix material, and a refractive index difference between said matrix material and said scattering particles is larger at a temperature of 300 K than at 375 K.

14 . The light-emitting diode module as claimed in claim 1 ,
wherein a covering layer is disposed jointly downstream of the light-emitting diode chips, wherein the covering layer comprises at least one scattering medium for intermixing the radiation proportions emitted by the light-emitting diode chips.

Assignees

• Windisch Reiner
• Bergenek Krister
• Osram Gmbh

Inventors

• Windisch Reiner
• Bergenek Krister

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/872

  Periodic patterns for optical field-shaping, e.g. photonic bandgap structures · CPC title

• H10H20/8513

  having two or more wavelength conversion materials · CPC title

• H10H20/855

  Optical field-shaping means, e.g. lenses · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title