Method of making metal substrates with structures formed therein
US-2024404922-A1 · Dec 5, 2024 · US
Semiconductor device and method of manufacturing semiconductor device
US2016126207A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016126207-A1 |
| Application number | US-201514924194-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 27, 2015 |
| Priority date | Oct 30, 2014 |
| Publication date | May 5, 2016 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, in which the joining layer includes a solder portion and a Cu 6 Sn 5 portion, base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and the Cu 6 Sn 5 portion is in contact with the nickel film.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor device comprising: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, wherein the joining layer includes a solder portion and a Cu 6 Sn 5 portion, base metal of the solder portion contains at least tin as a constituent element and contains elemental copper, and the Cu 6 Sn 5 portion is in contact with the nickel film. 2 . The semiconductor device according to claim 1 , wherein a proportion of copper contained in the joining layer is 7.6 wt % or lower. 3 . The semiconductor device according to claim 1 , wherein the base metal is an alloy containing tin and copper as major components. 4 . The semiconductor device according to claim 3 , wherein the base metal is an alloy containing Sn-0.7 Cu as a major component. 5 . A method of manufacturing a semiconductor device comprising: joining a semiconductor element to a joined member, which includes a nickel film, through a solder material whose base metal contains at least tin as a constituent element and contains elemental copper in which a proportion of copper is 2.0 wt % or higher. 6 . The method according to claim 5 , wherein the semiconductor element is joined to the nickel film which is on the joined member through the solder material.
Assignees
Inventors
Classifications
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
Encapsulations, e.g. protective coatings · CPC title
changes in materials · CPC title
changes in dispositions · CPC title
Soldering or alloying · CPC title
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Frequently asked questions
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- What does patent US2016126207A1 cover?
- A semiconductor device includes: a semiconductor element; a joined member that is joined to the semiconductor element and includes a nickel film; and a joining layer that is joined to the joined member and contains 2.0 wt % or higher of copper, in which the joining layer includes a solder portion and a Cu 6 Sn 5 portion, base metal of the solder portion contains at least tin as a constituent e…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W70/24. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).