Measurement mark structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016126194-A1
Application number	US-201414533108-A
Country	US
Kind code	A1
Filing date	Nov 5, 2014
Priority date	Nov 5, 2014
Publication date	May 5, 2016
Grant date	—

Abstract

The present invention provides a measurement mark structure, including a plurality of inner patterns, the inner patterns being arranged along a first direction, and an outer pattern, positioned surrounding the inner patterns, and the outer pattern is rectangular frame shaped.

First claim

What is claimed is:

1 . A measurement mark structure comprising:
a plurality of inner patterns, the inner patterns being arranged along a first direction; and an outer pattern, positioned surrounding the inner patterns, and the outer pattern is rectangular frame shaped.

2 . The measurement mark structure according to claim 1 , wherein the outer pattern does not contact each inner pattern directly.

3 . The measurement mark structure according to claim 1 , wherein each inner pattern is rectangular frame shaped, and has two long edges and two short edges.

4 . The measurement mark structure according to claim 3 , wherein each long edge of each inner pattern is parallel to a second direction, wherein the second direction and the first direction are perpendicular to each other.

5 . The measurement mark structure according to claim 4 further comprising:
a plurality of second inner patterns, and the second inner patterns being arranged along the second direction; and
a second outer pattern, positioned surrounding the second inner patterns, and the second outer pattern is rectangular frame shaped.

6 . The measurement mark structure according to claim 5 , wherein the second outer pattern does not contact each second inner pattern directly.

7 . The measurement mark structure according to claim 1 , wherein each outer pattern has two long edges and two short edges.

8 . The measurement mark structure according to claim 7 , wherein each long edge of each outer pattern is parallel to the first direction.

9 . The measurement mark structure according to claim 1 , further comprising a substrate, the inner patterns and the outer pattern being disposed on the substrate.

10 . A method for forming a measurement mark structure, at least comprising the following steps:
providing a substrate, and at least one mandrel pattern is formed on the substrate; forming a plurality of holes in the mandrel pattern, and the holes being arranged along a first direction; forming a spacer on the sidewall of the mandrel pattern and in each hole; and removing the mandrel pattern, the remained spacer defining a measurement mark structure, wherein the measurement mark structure comprises a plurality of inner patterns, the inner patterns being arranged along a first direction, and an outer pattern, positioned surrounding the inner patterns, and the outer pattern is rectangular frame shaped.

11 . The method according to claim 10 , wherein the outer pattern does not contact each inner pattern directly.

12 . The method according to claim 10 , wherein each inner pattern is rectangular frame shaped, and has two long edges and two short edges.

13 . The method according to claim 12 , wherein each long edge of each inner pattern is parallel to a second direction, wherein the second direction and the first direction are perpendicular to each other.

14 . The method according to claim 10 , further comprising:
forming a plurality of second inner patterns, and the second inner patterns being arranged along the second direction; and forming a second outer pattern, positioned surrounding the second inner patterns, and the second outer pattern is rectangular frame shaped.

15 . The method according to claim 14 , wherein the second outer pattern does not contact each second inner pattern directly.

16 . The method according to claim 10 , wherein each outer pattern has two long edges and two short edges.

17 . The method according to claim 16 , wherein each long edge of each outer pattern is parallel to the first direction.

Assignees

• United Microelectronics Corp

Inventors

• Hsu Chia-Chang
• Kuo Teng-Chin
• Liou En-Chiuan

Classifications

• H10P50/28 Primary

  of insulating materials · CPC title

• H01L2223/54426

  Electricity · mapped topic

• G01B11/002

  for measuring two or more coordinates · CPC title

• H01L21/311

  Electricity · mapped topic

• H01L23/544 Primary

  Electricity · mapped topic