Conductive structure body precursor, conductive structure body and method for manufacturing the same
US-2015370359-A1 · Dec 24, 2015 · US
US2016125969A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016125969-A1 |
| Application number | US-201614993395-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 12, 2016 |
| Priority date | May 21, 2009 |
| Publication date | May 5, 2016 |
| Grant date | — |
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An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.
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What is claimed is: 1 . A light-transmitting conductive film comprising conductive oxynitride including zinc and aluminum, wherein a ratio of the zinc in the oxynitride is lower than or equal to 47 atomic %, wherein a ratio of the aluminum in the conductive oxynitride is lower than a ratio of the zinc and higher than a ratio of nitrogen, and wherein a concentration of the nitrogen in the conductive oxynitride is higher than or equal to 5.0×10 20 atoms/cm 3 . 2 . The light-transmitting conductive film according to claim 1 , wherein the oxynitride including the zinc and the aluminum has at least a polycrystalline structure. 3 . A display device comprising the light-transmitting conductive film according to claim 1 . 4 . An electronic device comprising the light-transmitting conductive film according to claim 1 . 5 . A light-transmitting conductive film comprising oxynitride including zinc and aluminum, wherein a ratio of the aluminum in the oxynitride is higher than a ratio of nitrogen in the oxynitride, and wherein a carrier density is higher than or equal to 2.2×10 20 cm −3 and lower than 4.2×10 20 cm −3 . 6 . The light-transmitting conductive film according to claim 5 , wherein a ratio of the zinc in the oxynitride is lower than or equal to 47 atomic %. 7 . The light-transmitting conductive film according to claim 5 , wherein a concentration of the nitrogen in the oxynitride is higher than or equal to 5.0×10 20 atoms/cm 3 . 8 . The light-transmitting conductive film according to claim 5 , wherein the oxynitride including the zinc and the aluminum has at least a polycrystalline structure. 9 . A display device comprising the light-transmitting conductive film according to claim 5 . 10 . An electronic device comprising the light-transmitting conductive film according to claim 5 . 11 . A light-transmitting conductive film comprising oxynitride including zinc and aluminum, wherein a ratio of the aluminum in the oxynitride is higher than a ratio of nitrogen in the oxynitride, and wherein a mobility is higher than or equal to 4.7 cm 2 /V·sec and lower than 36.0 cm 2 /V·sec. 12 . The light-transmitting conductive film according to claim 11 , wherein a ratio of the zinc in the oxynitride is lower than or equal to 47 atomic %. 13 . The light-transmitting conductive film according to claim 11 , wherein a concentration of the nitrogen in the oxynitride is higher than or equal to 5.0×10 20 atoms/cm 3 . 14 . The light-transmitting conductive film according to claim 11 , wherein the oxynitride including the zinc and the aluminum has at least a polycrystalline structure. 15 . A display device comprising the light-transmitting conductive film according to claim 11 . 16 . An electronic device comprising the light-transmitting conductive film according to claim 11 . 17 . A light-transmitting conductive film comprising oxynitride including zinc and aluminum, wherein a ratio of the aluminum in the oxynitride is higher than a ratio of nitrogen in the oxynitride, and wherein a resistivity is higher than 4.1×10 −4 Ω·cm and lower than or equal to 6.1×10 −3 Ω·cm. 18 . The light-transmitting conductive film according to claim 17 , wherein a ratio of the zinc in the oxynitride is lower than or equal to 47 atomic %. 19 . The light-transmitting conductive film according to claim 17 , wherein a concentration of the nitrogen in the oxynitride is higher than or equal to 5.0×10 20 atoms/cm 3 . 20 . The light-transmitting conductive film according to claim 17 , wherein the oxynitride including the zinc and the aluminum has at least a polycrystalline structure. 21 . A display device comprising the light-transmitting conductive film according to claim 17 . 22 . An electronic device comprising the light-transmitting conductive film according to claim 17 . 23 . The light-transmitting conductive film according to claim 17 , wherein a transmissivity with respect to light having a wavelength of 470 nm is higher than or equal to 0.70. 24 . The light-transmitting conductive film according to claim 17 , wherein a transmissivity with respect to light having a wavelength of 530 nm is higher than or equal to 0.70. 25 . The light-transmitting conductive film according to claim 17 , wherein a transmissivity with respect to light having a wavelength of 680 nm is higher than or equal to 0.70.
Heating or cooling of the substrates · CPC title
Thermal treatment · CPC title
Oxynitrides · CPC title
mainly consisting of metals or alloys · CPC title
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
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