Materials and structures for haptic displays with simultaneous sensing and actuation

US2016124548A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016124548-A1
Application numberUS-201514931209-A
CountryUS
Kind codeA1
Filing dateNov 3, 2015
Priority dateNov 3, 2014
Publication dateMay 5, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A haptic interface device, said device comprising a substrate, a first conducting layer deposited on the substrate, with the first conducting layer being patterned to provide a first axis of individually-addressable conductive electrodes, a first insulating layer deposited on the first conducting layer, with the insulating layer having a uniform thickness, a second conducting layer deposited on the first insulating layer, with the second conducting layer being patterned to provide a second axis of individually-addressable conductive electrodes, and a dielectric layer deposited on the second conducting layer, with the dielectric layer having a uniform thickness and hardness and being scratch resistant.

First claim

Opening claim text (preview).

1 . A haptic interface device, said device comprising: a substrate; a first conducting layer deposited on the substrate, with the first conducting layer being patterned to provide a first axis of individually-addressable conductive electrodes; a first insulating layer deposited on the first conducting layer, with the insulating layer having a uniform thickness; a second conducting layer deposited on the first insulating layer, with the second conducting layer being patterned to provide a second axis of individually-addressable conductive electrodes; and a dielectric layer deposited on the second conducting layer, with the dielectric layer having a uniform thickness and hardness and being scratch resistant. 2 . The device of claim 1 , wherein the insulating layer is deposited across the entire surface of the first conductive layer such that the surface of the insulating layer is planar with no protrusions. 3 . The device of claim 1 , wherein the dielectric coating layer is deposited at a temperature of at least 170 C, and the substrate, the conductive layers and the insulating layer are capable of withstanding a temperature of at least 170 C without degradation. 4 . The device of claim 1 , wherein the dielectric layer further comprises alternating layers of organic and inorganic materials. 5 . The method of claim 1 , wherein the insulating layer is made of silica (SiO2). 6 . The device of claim 1 , wherein the dielectric layer is at least 1 micron thick. 7 . The device of claim 1 , wherein the dielectric layer is no more than 50 microns thick. 8 . The device of claim 1 , wherein the substrate, the conductive layers, the insulating layer, and the dielectric layer are transparent. 9 . The device of claim 1 , wherein signals for touch sensing are obtained from capacitance of each electrode, and wherein haptic effects are produced by generating an electric field between an electrode and an appendage of a user that touches a touch surface of the device. 10 . The device of claim 1 , wherein an index matching layer is provided underneath the first conductive layer. 11 . A method of forming a haptic device, the method including the steps of: forming a substrate; depositing a first conductive layer on the substrate; patterning electrodes into the first conductive layer; depositing an insulation layer on the first conductive layer; depositing a second conductive layer on the insulation layer; patterning electrodes into the second conductive layers; and depositing a dielectric layer on the second conductive layer. 12 . The method of claim 11 , wherein the insulating layer is deposited across the entire surface of the first conductive layer such that the surface of the insulating layer is planar with no protrusions. 13 . The method of claim 11 , wherein the insulating layer is made of silica (SiO2). 14 . The method of claim 11 , wherein the dielectric layer is deposited at a temperature of at least 170 C, and the substrate, the conductive layers and the insulating layer are capable of withstanding a temperature of at least 170 C without degradation. 15 . The method of claim 11 , wherein the dielectric layer further comprises alternating layers of organic and inorganic materials. 16 . The method of claim 11 , wherein the dielectric layer is at least 1 micron thick. 17 . The method of claim 11 , wherein the dielectric layer is no more than 50 microns thick. 18 . The method of claim 11 , wherein the substrate, the conductive layers, the insulating layer, and the dielectric layer are transparent. 19 . The method of claim 11 , wherein signals for touch sensing are obtained from capacitance of each electrode, and wherein haptic effects are produced by generating an electric field between an electrode and an appendage of a user that touches a touch surface of the device. 20 . The method of claim 11 , wherein an index matching layer is provided underneath the first conductive layer.

Assignees

Inventors

Classifications

  • Digitisers structurally integrated in a display · CPC title

  • G06F3/044Primary

    by capacitive means · CPC title

  • Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices · CPC title

  • G06F3/016Primary

    Input arrangements with force or tactile feedback as computer generated output to the user · CPC title

  • No clear coat specified · CPC title

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What does patent US2016124548A1 cover?
A haptic interface device, said device comprising a substrate, a first conducting layer deposited on the substrate, with the first conducting layer being patterned to provide a first axis of individually-addressable conductive electrodes, a first insulating layer deposited on the first conducting layer, with the insulating layer having a uniform thickness, a second conducting layer deposited on…
Who is the assignee on this patent?
Univ Northwestern
What technology area does this patent fall under?
Primary CPC classification G06F3/044. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu May 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).