Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
US-9422639-B2 · Aug 23, 2016 · US
Method of manufacturing silicon carbide single crystal
US2016122902A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016122902-A1 |
| Application number | US-201514804438-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 21, 2015 |
| Priority date | Oct 31, 2014 |
| Publication date | May 5, 2016 |
| Grant date | — |
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Abstract
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A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mm 2 or less.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method of manufacturing a silicon carbide single crystal, comprising steps of: preparing a crucible having a top surface, a bottom surface opposite to said top surface, and a tubular side surface located between said top surface and said bottom surface, a resistive heater provided outside of said crucible and made of carbon, a source material provided in said crucible, and a seed crystal provided to face said source material in said crucible; and…
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- C30B23/066Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US2016122902A1 cover?
- A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal …
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C30B23/066. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu May 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).