Solid state imaging apparatus

Patent metadata

Field	Value
Publication number	US-2016119565-A1
Application number	US-201414895261-A
Country	US
Kind code	A1
Filing date	May 28, 2014
Priority date	Jun 7, 2013
Publication date	Apr 28, 2016
Grant date	—

Abstract

A solid-state imaging device includes a photodetecting section, a vertical shift register section, first row selection lines, and second row selection lines. The vertical shift register section provides the row selection lines of the m-th row with common row selection signals.

First claim

1 . A solid-state imaging device comprising:
a photodetecting section having M×N pixels (each of M and N being an integer of 2 or more), each including one photodiode and first and second switch circuits each having one terminal connected to the one photodiode, two-dimensionally arrayed in M rows and N columns; N readout lines provided for the respective columns and connected to the other terminals of the first and second switch circuits included in the pixels of the corresponding columns; M first row selection lines provided for the respective rows and connected to control terminals of the first switch circuits included in the pixels of the corresponding rows; M first buffers having respective output terminals connected to the M first row selection lines; M second row selection lines provided for the respective rows and connected to control terminals of the second switch circuits included in the pixels of the corresponding rows; M second buffers having respective output terminals connected to the M second row selection lines; and a shift register section for generating a row selection signal for controlling an open/closed state of the first and second switch circuits for each row and providing input terminals of the first and second buffers with the common row selection signal, wherein the shift register section has M signal output terminals provided one by one for the respective rows for outputting the row selection signal, the signal output terminals being connected to the input terminals of the first and second buffers of the corresponding rows.

2 . The solid-state imaging device according to claim 1 , wherein the first and second row selection lines are disposed in a region between the pixels.

3 . The solid-state imaging device according to claim 1 , wherein one row selection line of the first and second row selection lines is disposed in a region between the pixels, and the other row selection line is disposed on the pixel.

4 . The solid-state imaging device according to claim 3 , further comprising a reference potential line disposed between the other row selection line and the pixel.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Fujita Kazuki
• Kyushima Ryuji
• Sawada Junichi
• Mori Harumichi

Classifications

• H04N25/778 Primary

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• H04N25/767

  Horizontal readout lines, multiplexers or registers · CPC title

• H04N25/68

  applied to defects · CPC title

• H04N25/779

  Circuitry for scanning or addressing the pixel array · CPC title

• H10F39/1898

  Indirect radiation image sensors, e.g. using luminescent members · CPC title