US2016118465A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016118465-A1 |
| Application number | US-201514872308-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 1, 2015 |
| Priority date | Oct 22, 2014 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
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A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.
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What we claim is: 1 . A method of making a SiC buffer layer on a Si substrate, comprising: depositing an amorphous carbon layer on a Si(001) substrate; controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer; forming a deposited film; annealing the deposited film and the Si(001) substrate; and forming a SiC buffer layer on the Si(001) substrate. 2 . The method of making a SiC buffer layer on a Si substrate of claim 1 wherein the Si(001) substrate is hydrogen passivated by chemical etching using hydrofluoric acid (HF), prior to the step of depositing a carbon layer, and wherein the deposited film has a root-mean-square roughness of about 0.3 nm. 3 . The method of making a SiC buffer layer on a Si substrate of claim 2 wherein the deposited amorphous carbon film on the Si(001) substrate is annealed and wherein the step of annealing is at a temperature of from about 850° C. to about 950° C. for about 30 minutes. 4 . The method of making a SiC buffer layer on a Si substrate of claim 3 wherein the step of depositing the amorphous carbon layer on the Si(001) substrate is by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min. 5 . The method of making a SiC buffer layer on a Si substrate of claim 4 wherein the magnetron sputtering comprises 15 sccm Ar flow, 3 mT pressure, and 100 W DC plasma power. 6 . The method of making a SiC buffer layer on a Si substrate of claim 1 wherein the step of annealing at a temperature of about 950° C. comprises a ramp rate of about 1° C./sec and pressure below 2×10 −9 Torr. 7 . The method of making a SiC buffer layer on a Si substrate of claim 1 wherein the method is via a solid state reaction. 8 . A 3C—SiC buffer layer on Si(001), comprising: a buffer layer of 3C—SiC on a Si(001) substrate; wherein the buffer layer is produced through a solid state reaction. 9 . The 3C—SiC buffer layer on Si(001) of claim 8 wherein the buffer layer of 3C—SiC is about 1-2 nm thick. 10 . The 3C—SiC buffer layer on Si(001) of claim 9 wherein the buffer layer of 3C—SiC forms at a temperature of about 850° C. to about 950° C. 11 . The 3C—SiC buffer layer on Si(001) of claim 8 wherein the buffer layer of 3C—SiC is compatible with CVD and MBE.
Carbon, e.g. diamond-like carbon · CPC title
Thermal treatments, e.g. annealing or sintering · CPC title
Chemical etching · CPC title
Amorphous · CPC title
Structure · CPC title
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