Capacitor and semiconductor device including the same
US-2024387608-A1 · Nov 21, 2024 · US
Metal-insulator-metal back end of line capacitor structures
US2016118458A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016118458-A1 |
| Application number | US-201514983157-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 29, 2015 |
| Priority date | May 7, 2014 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Embodiments of the present invention provide improved metal-insulator-metal (MIM) capacitors. In embodiments, series resistance is reduced by forming a via underneath the bottom plate of a MIM capacitor, leading to a metallization layer or intermediate metal sublayer. In embodiments, the MIM capacitor is formed with a corrugated shape to increase the plate surface area, allowing a thicker dielectric to be used, thereby mitigating leakage issues.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor structure comprising: a first metallization layer; an interlevel dielectric layer disposed on the first metallization layer; a second metallization layer disposed on the interlevel dielectric layer; a metal-insulator-metal (MIM) capacitor disposed within the interlevel dielectric layer, the MIM capacitor having a first plate, a capacitor dielectric layer, and a second plate, wherein the capacitor dielectric layer is disposed between the first plate and the second plate; a via from the second plate to a metal region within the first metallization layer; a via from the first plate to the second metallization layer; and a via from the metal region to the second metallization layer. 2 . The semiconductor structure of claim 1 , wherein the metal region within the first metallization layer is comprised of copper. 3 . The semiconductor structure of claim 1 , wherein the first plate and second plate are comprised of titanium nitride. 4 . The semiconductor structure of claim 1 , wherein the first plate and second plate are comprised of boron-doped titanium nitride. 5 . The semiconductor structure of claim 1 , wherein the first plate and second plate are comprised of tantalum nitride. 6 . The semiconductor structure of claim 1 , wherein the capacitor dielectric layer comprises hafnium oxide. 7 . The semiconductor structure of claim 1 , wherein the capacitor dielectric layer comprises aluminum oxide. 8 . The semiconductor structure of claim 1 , wherein the capacitor dielectric layer comprises tantalum oxide. 9 .- 20 . (canceled)
Assignees
Inventors
Classifications
comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title
the principal metal being copper · CPC title
Capacitor integral with wiring layers · CPC title
Vias, e.g. via plugs · CPC title
- H10D1/692Primary
Electrodes · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016118458A1 cover?
- Embodiments of the present invention provide improved metal-insulator-metal (MIM) capacitors. In embodiments, series resistance is reduced by forming a via underneath the bottom plate of a MIM capacitor, leading to a metallization layer or intermediate metal sublayer. In embodiments, the MIM capacitor is formed with a corrugated shape to increase the plate surface area, allowing a thicker diele…
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D1/692. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Apr 28 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).