Radio-frequency identification (rfid) capacitance liquid measurement tag system
US-2024311609-A1 · Sep 19, 2024 · US
US2016117584A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016117584-A1 |
| Application number | US-201514920161-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 22, 2015 |
| Priority date | Oct 24, 2014 |
| Publication date | Apr 28, 2016 |
| Grant date | — |
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Official abstract text for this publication.
To provide a semiconductor device that is capable of displaying data even when a radio signal is not supplied. The semiconductor device includes an antenna, a battery, a sensor, a nonvolatile memory, a first circuit, and a second circuit. Power supplied from the antenna is converted into first power via the first circuit. The battery stores the first power and supplies second power. The sensor performs sensing with the second power. The nonvolatile memory stores analog data acquired by the sensor. The second power is used to store the analog data. The second circuit converts the analog data into digital data with the use of the first power. The nonvolatile memory preferably includes an oxide semiconductor transistor.
Opening claim text (preview).
What is claimed is: 1 . A semiconductor device comprising: an antenna; a battery; a sensor; a first nonvolatile memory; a first circuit; and a second circuit, wherein power supplied from the antenna is converted into first power via the first circuit, wherein the battery is configured to store the first power and supply second power, wherein the first nonvolatile memory is configured to store analog data acquired by the sensor, wherein the first nonvolatile memory is configured to store the analog data with the use of the second power, and wherein the second circuit is configured to convert the analog data into digital data with the use of the first power. 2 . The semiconductor device according to claim 1 , wherein the sensor acquires the analog data with the use of the second power. 3 . The semiconductor device according to claim 1 , wherein the first nonvolatile memory includes a transistor whose channel includes an oxide semiconductor. 4 . The semiconductor device according to claim 1 , further comprising a second nonvolatile memory, wherein the second nonvolatile memory is configured to store a time at which the analog data is acquired by the sensor, and wherein the second nonvolatile memory is configured to store the time with the use of the second power. 5 . The semiconductor device according to claim 1 , wherein the battery is a lithium-ion secondary battery containing an ionic liquid electrolyte. 6 . A display device comprising: the semiconductor device according to claim 1 ; a solar cell; and a flexible support. 7 . A semiconductor device comprising: an antenna; a battery; a sensor; a first nonvolatile memory; and first to fourth circuits, wherein power supplied from the antenna is converted into first power via the first circuit, wherein the battery is configured to store the first power and supply second power, wherein the second circuit is configured to generate a first clock signal, wherein the third circuit is configured to generate a second clock signal, wherein the first clock signal has a higher frequency than the second clock signal, wherein the first nonvolatile memory is configured to store analog data acquired by the sensor, wherein the first nonvolatile memory is configured to store the analog data with the use of the second power and the second clock signal, and wherein the fourth circuit is configured to convert the analog data into digital data with the use of the first power and the first clock signal. 8 . The semiconductor device according to claim 7 , wherein the sensor acquires the analog data with the use of the second power. 9 . The semiconductor device according to claim 7 , wherein the first nonvolatile memory includes a transistor whose channel includes an oxide semiconductor. 10 . The semiconductor device according to claim 7 , further comprising a second nonvolatile memory, wherein the second nonvolatile memory is configured to store a time at which the analog data is acquired by the sensor, and wherein the second nonvolatile memory is configured to store the time with the use of the second power. 11 . The semiconductor device according to claim 7 , wherein the battery is a lithium-ion secondary battery containing an ionic liquid electrolyte. 12 . A display device comprising: the semiconductor device according to claim 7 ; a solar cell; and a flexible support. 13 . A semiconductor device comprising: an antenna; a battery; a power supply circuit; an analog circuit; a logic circuit; a nonvolatile memory; a power control circuit; and a display portion, wherein the power control circuit is configured to control charge and discharge of the battery in accordance with intensity of a radio signal received by the antenna, and wherein the nonvolatile memory is configured to store an image signal for displaying an image on the display portion. 14 . The semiconductor device according to claim 13 , wherein the battery is a lithium-ion secondary battery containing an ionic liquid electrolyte. 15 . The semiconductor device according to claim 13 , wherein the nonvolatile memory includes a transistor whose channel includes an oxide semiconductor. 16 . The semiconductor device according to claim 13 , wherein the display portion includes a light-emitting diode. 17 . A display device comprising: the semiconductor device according to claim 13 ; a solar cell; and a flexible support.
the visual interface being a display, e.g. LCD or electronic ink · CPC title
the arrangement including a battery · CPC title
Special arrangements for circuits, e.g. for protecting identification code in memory (protection against unauthorised use of computer memory G06F12/14) · CPC title
at least one of the integrated circuit chips comprising a sensor or an interface to a sensor · CPC title
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