SUBSTRATE THAT IS ELECTRICALLY CONDUCTIVE ON AT LEAST ONE OF THE FACES OF SAME PROVIDED WITH A STACK OF THIN LAYERS FOR GROWING CARBONB NANOTUBES (CNTs)

Patent metadata

Field	Value
Publication number	US-2016115031-A1
Application number	US-201414894489-A
Country	US
Kind code	A1
Filing date	May 27, 2014
Priority date	May 28, 2013
Publication date	Apr 28, 2016
Grant date	—

Abstract

The invention concerns a substrate that is electrical conductive on at least one of the faces of same, provided with a stack of thin layers comprising at least one layer of catalyst material suitable for accelerating the growth of carbon nanotubes, characterised in that the stack comprises the sequence of thin layers deposited in the following order on top of said at least one electrically conductive face of the substrate: a) optionally, a metal made from metal M or a layer of a metal alloy made from metal M or a graphene layer; b) a titanium layer (Ti); c) an aluminum layer (Al); d) a layer of catalyst material(s) for the growth of carbon nanotubes. The invention also concerns a functional substrate ( 6 ) comprising a substrate coated with a carbon nanotube (NTC) mat, a production method and the uses of such a functional substrate.

First claim

1 . A substrate which is electrically conducting on at least one of its faces, provided with a stack of thin layers comprising at least one layer of catalyst material appropriate for accelerating the growth of carbon nanotubes, wherein the stack comprises the sequence of thin layers deposited in the following order above said at least one electrically conducting face of the substrate:
a/ if appropriate, metal layer made of metal M or layer made of metal alloy based on the metal M or layer made of graphene; b/ titanium (Ti) layer; c/ aluminum (Al) layer; d/ layer of material(s) which are catalysts of the growth of carbon nanotubes.

2 . The substrate as claimed in claim 1 , being a bulk metal substrate.

3 . The bulk metal substrate as claimed in claim 2 , the metal of the substrate being chosen from copper (Cu), aluminum (Al), stainless steel, nickel (Ni) or platinum (Pt).

4 . The substrate as claimed in claim 1 , being a substrate coated with one or more thin electrically conducting layers forming said electrically conducting face.

5 . The substrate as claimed in claim 4 , the thin electrically conducting layer(s) being chosen from titanium nitride (TiN), tantalum nitride (TaN) or graphene.

6 . The substrate as claimed in claim 4 , being an electrically insulating substrate, such as a substrate made of silicon (Si) or made of silicon dioxide (SiO 2 ).

7 . The substrate as claimed in claim 1 , the metal M of the metal layer deposited directly on the electrically conducting face of the substrate being chosen from iron (Fe), chromium (Cr), nickel (Ni), cobalt (Co) or palladium (Pd), and also from all the binary, ternary or quaternary alloys between these metals.

8 . The substrate as claimed in claim 1 , the material(s) which is(are) catalyst(s) of the growth of the carbon nanotubes (CNTs) of the layer of the top of the stack being chosen from iron (Fe), chromium (Cr), nickel (Ni), cobalt (Co) or palladium (Pd), and also from all the binary, ternary or quaternary alloys between these metals.

9 . The substrate as claimed in claim 1 , the layer deposited directly on the electrically conducting face of the substrate and the layer of material which is a catalyst of the growth of carbon nanotubes being composed of the same material.

10 . The substrate as claimed in claim 1 , the thickness of the layer deposited directly on the electrically conducting face of the substrate being between 1 and 20 nm.

11 . The substrate as claimed in claim 1 , the thickness of the Ti layer being between 2 and 10 nm.

12 . The substrate as claimed in laim 1 , the thickness of the Al layer being between 2 and 10 nm.

13 . The substrate as claimed in claim 1 , the thickness of the layer of materials which are catalysts of the growth of carbon nanotubes being between 0.2 and 5 nm.

14 . The substrate as claimed in claim 1 , the stack being as follows: bulk substrate made of copper or of aluminum/Fe/Ti/Al/Fe, the iron (Fe) layer directly in contact with the bulk substrate having a thickness of between 1 and 10 nm.

15 . The substrate as claimed in claim 1 , the stack being as follows: bulk substrate made of stainless steel/Ti/Al/Fe.

16 . The substrate as claimed claim 1 , the stack being as follows: substrate made of titanium nitride (TiN) or tantalum nitride (TaN) in the form of thin layers/Fe/Ti/Al/Fe, the iron (Fe) layer directly in contact with the substrate having a thickness of between 10 and 20 nm.

17 . The substrate as claimed in claim 1 , the stack being as follows: bulk substrate covered with one or more layers made of graphene/Fe/Ti/Al/Fe, the iron (Fe) layer directly in contact with the graphene having a thickness of between 1 and 10 nm.

18 . A functional substrate comprising a substrate as claimed in claim 1 coated with a mat of carbon nanotubes (CNTs).

19 . The functional substrate as claimed in claim 18 , the CNTs density being greater than 10 12 /cm 2 , indeed even 10 13 /cm 2 .

20 . A process for the preparation of a functional substrate as claimed in claim 18 , according to which the following stages are carried out:
preparation, by vacuum evaporation, of the stack of thin layers, if appropriate with the metal layer made of metal M or layer made of metal alloy based on the metal M or layer made of graphene ( 2 ), on the electrically conducting face of the substrate as claimed in claim 1 ; growth of mat of carbon nanotubes (CNTs) on the stack according to a chemical vapor deposition (CVD) technique, enhanced or not enhanced by plasma and activated or nonactivated by hot wires (Hot Wire CVD or HWCVD).

21 . The process as claimed in claim 20 , according to which, before carrying out the growth stage, the layer of catalyst materials is oxidized by means of an air plasma.

22 . The use of a functional substrate as claimed in claim 18 as element of interconnections in microelectronics, or of electrodes for batteries, such as lithium-sulfur batteries, or of supercapacitors, of interposers used for thermal management in microelectronics, or of heat exchangers.

Assignees

• Commissariat Energie Atomique

Inventors

• Okuno Hanako
• Ramos Raphael
• Dijon Jean

Classifications

• C01B31/0226 Primary

  Chemistry & Metallurgy · mapped topic

• C23C16/26 Primary

  Deposition of carbon only · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• B01J27/24

  Nitrogen compounds · CPC title

• B01J23/745

  Iron · CPC title