Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming Thereof

Patent metadata

Field	Value
Publication number	US-2016111603-A1
Application number	US-201414519274-A
Country	US
Kind code	A1
Filing date	Oct 21, 2014
Priority date	Oct 21, 2014
Publication date	Apr 21, 2016
Grant date	—

Abstract

Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. Specifically, an LED has an epitaxial stack and current distribution layer disposed on and interfacing the epitaxial stack. The current distribution layer includes indium oxide and zinc oxide such that the concentration of indium oxide is between about 5% and 15% by weight. During fabrication, the current distribution layer is annealed at a temperature of less than about 500° C. or even at less than about 400° C. These low anneal temperature helps preserving the overall thermal budget of the LED while still yielding a current distribution layer having a low resistivity and low adsorption. A particular composition and method of forming the current distribution layer allows using lower annealing temperatures. In some embodiments, the current distribution layer is sputtered using indium oxide and zinc oxide targets at a pressure of less than 5 mTorr.

First claim

1 . A method of fabricating a light emitting diode, the method comprising:
forming a first layer using sputtering,
wherein the first layer comprises indium oxide and zinc oxide,
wherein a concentration of indium oxide in the first layer is between about 5% and 15% by weight,
wherein the first layer is formed on a surface of an epitaxial stack,
wherein the surface comprises gallium nitride; and
annealing the first layer at a temperature of between about 100° C. and 500° C.

2 . The method of claim 1 , wherein the concentration of indium oxide in the first layer is between about 8% and 12% by weight.

3 . The method of claim 1 , wherein the concentration of indium oxide in the first layer is about 10% by weight.

4 . The method of claim 1 , wherein annealing the first layer is performed at the temperature of between about 150° C. and 400° C.

5 . The method of claim 1 , wherein annealing the first layer is performed at the temperature of between about 200° C. and 300° C.

6 . The method of claim 1 , wherein forming the first layer comprises co-sputtering a first target comprising zinc oxide and a second target comprising indium oxide.

7 . The method of claim 6 , wherein a ratio of power applied to the first target to power applied to the second target is between 2 and 10.

8 . The method of claim 6 , wherein co-sputtering is performed in an environment substantially free from oxygen.

9 . The method of claim 1 , wherein sputtering is performed at a pressure of less than 5 mTorr.

10 . The method of claim 1 , wherein, after annealing, the first layer has a resistivity of less than about 400 microOhm-centimeters.

11 . The method of claim 1 , wherein, after annealing, the first layer has an absorption coefficient of less than 0.04% per nanometer.

12 . The method of claim 1 , wherein, after annealing, the first layer has a refractive index of between about 2.0 and 2.2.

13 . The method of claim 1 , wherein the first layer has a thickness of between about 50 nanometers and 100 nanometers.

14 . The method of claim 1 , wherein a composition of the first layer is substantially uniform throughout a thickness of the first layer.

15 . The method of claim 1 , wherein a composition of the first layer varies throughout a thickness of the first layer.

16 . The method of claim 15 , wherein the concentration of indium oxide in the first layer is higher closer to the surface of the epitaxial stack than away from the surface.

17 . The method of claim 1 , wherein the surface comprises p-doped gallium nitride.

18 . The method of claim 1 , further comprising forming a second layer partially covering the first layer, wherein the second layer is operable as an electrode.

19 . The method of claim 18 , wherein the second layer comprises gold.

20 . (canceled)

Assignees

• Intermolecular Inc
• Epistar Corp

Inventors

• Hu Jianhua
• Cardozo Ben
• Le Minh Huu
• Nijhawan Sandeep
• Yeh J H

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10H20/833 Primary

  Transparent materials · CPC title