Using High Resolution Full Die Image Data for Inspection
US-2015324965-A1 · Nov 12, 2015 · US
US2016110859A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016110859-A1 |
| Application number | US-201414516961-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 17, 2014 |
| Priority date | Oct 17, 2014 |
| Publication date | Apr 21, 2016 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An inspection method for contact by die to database is provided. In the method, a plurality of raw images of contacts in a wafer is obtained, and a plurality of locations of the raw images is then recoded to obtain a graphic file. After that, the graphic file is aligned on a design database of the chip. An image extraction is then performed on the raw images to obtain a plurality of image contours of the contacts. Thereafter, a difference in critical dimension between the image contours of the contacts and corresponding contacts in the design database are measured in order to obtain the inspection result for contacts in the wafer.
Opening claim text (preview).
What is claimed is: 1 . An inspection method for a contact by die to database, comprising: obtaining raw images of a plurality of contacts in a wafer; decoding positions of the raw images of the contacts to obtain a decoded graphic file; aligning the graphic file on a design database of a chip; performing an image extraction on the raw images to obtain a plurality of image contours of the contacts; and measuring a difference in a critical dimension between the image contours of the contacts and a plurality of corresponding contacts in the design database. 2 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the contact further comprises a via or a poly plug in the die. 3 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the difference comprises at least one of numerical differences in radius, size, and circular area of the contact. 4 . The inspection method for the contact by die to database as claimed in claim 1 , further comprising determining a defect type of the contacts based on the difference. 5 . The inspection method for the contact by die to database as claimed in claim 4 , wherein the defect type comprises a small contact, a bridge contact, or a blind contact. 6 . The inspection method for the contact by die to database as claimed in claim 1 , wherein before obtaining the raw images, the method further comprises: selecting a plurality of inspection areas that the contacts are located to be inspected in the wafer; and resetting coordinates of the inspection areas to minimize overlapped portions of the areas. 7 . The inspection method for the contact by die to database as claimed in claim 6 , wherein the method of selecting the inspection areas comprises setting an area having the critical dimension (CD) lower than a predetermined value in the design database to be the inspection area. 8 . The inspection method for the contact by die to database as claimed in claim 6 , wherein the method of selecting the inspection areas comprises setting an area having the contact with a size over or under a predetermined value to be the inspection area according to a design rule. 9 . The inspection method for the contact by die to database as claimed in claim 6 , wherein the method of selecting the inspection areas comprises selecting the inspection areas according to a result of a wafer defect inspection previously performed. 10 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images comprises an E-beam inspection or an E-beam SEM review tool. 11 . The inspection method for the contact by die to database as claimed in claim 10 , wherein an apparatus for executing the E-beam inspection comprises an E-beam inspection tool, a bright field inspection equipment with a light source having a wavelength of 150 nm to 800 nm, a dark field inspection equipment with a laser light source, or a scanning electron microscope review tool. 12 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images further comprises decoding a metafile of the raw images and marking a position of the die and a defect coordinate position corresponding to a die corner. 13 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images further comprises transferring the raw images into the die database according to the connection between KLA Klarf file and the raw images. 14 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images further comprises decoding a filename of the raw images and marking a position of the die and a defect coordinate position corresponding to a die corner. 15 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images comprises: shooting a known die position and a defect coordinate position corresponding to a die corner; and transferring the known die position and a corresponding image into a die database. 16 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the design database comprises a GDSII file of a source design database, a GDSII file of a simulated post-optical proximity correction (post-OPC), or a design database converted from a simulated tool. 17 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images of the contacts comprises obtaining the raw images of the contacts in selected regions in all the dies or the chips within the whole wafer. 18 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images of the contacts comprises obtaining the raw images of the contacts in selected regions in a portion of the dies or the chips within the whole wafer. 19 . The inspection method for the contact by die to database as claimed in claim 1 , wherein before obtaining the raw images of the contacts, the method further comprises performing a die register to improve alignment performance. 20 . The inspection method for the contact by die to database as claimed in claim 1 , wherein before obtaining the raw images of the contacts, the method further comprises: setting an identify position on to-be-shot positions or to-be-inspected coordinates in different dies to improve alignment performance, and setting a virtual die corner on the to-be-shot positions or the to-be-inspected coordinates in different dies to improve alignment performance.
checking presence/absence · CPC title
using an image reference approach · CPC title
Semiconductor; IC; Wafer · CPC title
using a design-rule based approach · CPC title
from scanning electron microscope · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.