Inspection method for contact by die to database

US2016110859A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016110859-A1
Application numberUS-201414516961-A
CountryUS
Kind codeA1
Filing dateOct 17, 2014
Priority dateOct 17, 2014
Publication dateApr 21, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An inspection method for contact by die to database is provided. In the method, a plurality of raw images of contacts in a wafer is obtained, and a plurality of locations of the raw images is then recoded to obtain a graphic file. After that, the graphic file is aligned on a design database of the chip. An image extraction is then performed on the raw images to obtain a plurality of image contours of the contacts. Thereafter, a difference in critical dimension between the image contours of the contacts and corresponding contacts in the design database are measured in order to obtain the inspection result for contacts in the wafer.

First claim

Opening claim text (preview).

What is claimed is: 1 . An inspection method for a contact by die to database, comprising: obtaining raw images of a plurality of contacts in a wafer; decoding positions of the raw images of the contacts to obtain a decoded graphic file; aligning the graphic file on a design database of a chip; performing an image extraction on the raw images to obtain a plurality of image contours of the contacts; and measuring a difference in a critical dimension between the image contours of the contacts and a plurality of corresponding contacts in the design database. 2 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the contact further comprises a via or a poly plug in the die. 3 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the difference comprises at least one of numerical differences in radius, size, and circular area of the contact. 4 . The inspection method for the contact by die to database as claimed in claim 1 , further comprising determining a defect type of the contacts based on the difference. 5 . The inspection method for the contact by die to database as claimed in claim 4 , wherein the defect type comprises a small contact, a bridge contact, or a blind contact. 6 . The inspection method for the contact by die to database as claimed in claim 1 , wherein before obtaining the raw images, the method further comprises: selecting a plurality of inspection areas that the contacts are located to be inspected in the wafer; and resetting coordinates of the inspection areas to minimize overlapped portions of the areas. 7 . The inspection method for the contact by die to database as claimed in claim 6 , wherein the method of selecting the inspection areas comprises setting an area having the critical dimension (CD) lower than a predetermined value in the design database to be the inspection area. 8 . The inspection method for the contact by die to database as claimed in claim 6 , wherein the method of selecting the inspection areas comprises setting an area having the contact with a size over or under a predetermined value to be the inspection area according to a design rule. 9 . The inspection method for the contact by die to database as claimed in claim 6 , wherein the method of selecting the inspection areas comprises selecting the inspection areas according to a result of a wafer defect inspection previously performed. 10 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images comprises an E-beam inspection or an E-beam SEM review tool. 11 . The inspection method for the contact by die to database as claimed in claim 10 , wherein an apparatus for executing the E-beam inspection comprises an E-beam inspection tool, a bright field inspection equipment with a light source having a wavelength of 150 nm to 800 nm, a dark field inspection equipment with a laser light source, or a scanning electron microscope review tool. 12 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images further comprises decoding a metafile of the raw images and marking a position of the die and a defect coordinate position corresponding to a die corner. 13 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images further comprises transferring the raw images into the die database according to the connection between KLA Klarf file and the raw images. 14 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images further comprises decoding a filename of the raw images and marking a position of the die and a defect coordinate position corresponding to a die corner. 15 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images comprises: shooting a known die position and a defect coordinate position corresponding to a die corner; and transferring the known die position and a corresponding image into a die database. 16 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the design database comprises a GDSII file of a source design database, a GDSII file of a simulated post-optical proximity correction (post-OPC), or a design database converted from a simulated tool. 17 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images of the contacts comprises obtaining the raw images of the contacts in selected regions in all the dies or the chips within the whole wafer. 18 . The inspection method for the contact by die to database as claimed in claim 1 , wherein the method of obtaining the raw images of the contacts comprises obtaining the raw images of the contacts in selected regions in a portion of the dies or the chips within the whole wafer. 19 . The inspection method for the contact by die to database as claimed in claim 1 , wherein before obtaining the raw images of the contacts, the method further comprises performing a die register to improve alignment performance. 20 . The inspection method for the contact by die to database as claimed in claim 1 , wherein before obtaining the raw images of the contacts, the method further comprises: setting an identify position on to-be-shot positions or to-be-inspected coordinates in different dies to improve alignment performance, and setting a virtual die corner on the to-be-shot positions or the to-be-inspected coordinates in different dies to improve alignment performance.

Assignees

Inventors

Classifications

  • checking presence/absence · CPC title

  • G06T7/001Primary

    using an image reference approach · CPC title

  • Semiconductor; IC; Wafer · CPC title

  • G06T7/0006Primary

    using a design-rule based approach · CPC title

  • from scanning electron microscope · CPC title

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What does patent US2016110859A1 cover?
An inspection method for contact by die to database is provided. In the method, a plurality of raw images of contacts in a wafer is obtained, and a plurality of locations of the raw images is then recoded to obtain a graphic file. After that, the graphic file is aligned on a design database of the chip. An image extraction is then performed on the raw images to obtain a plurality of image conto…
Who is the assignee on this patent?
Macronix Int Co Ltd
What technology area does this patent fall under?
Primary CPC classification G06T7/001. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Apr 21 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).