Large-area single-crystal monolayer graphene film and method for producing the same

Patent metadata

Field	Value
Publication number	US-2016108546-A1
Application number	US-201414892658-A
Country	US
Kind code	A1
Filing date	May 21, 2014
Priority date	May 21, 2013
Publication date	Apr 21, 2016
Grant date	—

Abstract

The present invention relates to a large-area single-crystal monolayer graphene film in which a graphene layer is formed on a single-crystal metal catalyst layer whose crystal plane orientation is (111) optionally on a substrate. In the large-area single crystal monolayer graphene film of the present invention, a single-crystal metal catalyst layer whose crystal plane orientation is (111) can be formed in the shape of a foil, plate, block or tube optionally on a substrate and a graphene layer is formed on the catalyst layer. The present invention also relates to a method for producing a large-area single-crystal monolayer graphene film whose crystal plane orientation is (111) by annealing and chemical vapor deposition of a metal precursor. According to the method of the present invention, a high-quality large-area graphene thin film applicable as a material for transparent electrodes, display devices, semiconductor devices, separation membranes, fuel cells, solar cells, and sensors can be produced on a commercial scale.

First claim

1 . A large-area single-crystal monolayer graphene film, comprising: a single-crystal metal catalyst layer whose crystal plane orientation is (111) optionally on a substrate; and a graphene layer formed on the single-crystal metal catalyst layer.

2 . The large-area single-crystal monolayer graphene film according to claim 1 , wherein the substrate is a single-crystal substrate or a non-single-crystalline substrate.

3 . The large-area single-crystal monolayer graphene film according to claim 1 , wherein the substrate is a silicon substrate, a metal oxide substrate or a ceramic substrate.

4 . The large-area single-crystal monolayer graphene film according to claim 3 , wherein the substrate is made of a material selected from the group consisting of silicon (Si), silicon dioxide (SiO 2 ) silicon nitride (Si 3 N 4 ), zinc oxide (ZnO), zirconium dioxide (ZrO 2 ), nickel oxide (NiO), hafnium oxide (HfO 2 ), cobalt (II) oxide (CoO), copper (II) oxide (CuO), iron (II) oxide, (FeO), magnesium oxide (MgO), α-aluminum oxide (α-Al 2 O 3 ), aluminum oxide (Al 2 O 3 ), strontium titanate (SrTiO 3 ), lanthanum aluminate (LaAlO 3 ), titanium dioxide (TiO 2 ), tantalum dioxide (TaO 2 ), niobium dioxide (NbO 2 ), and boron nitride (BN).

5 . The large-area single-crystal monolayer graphene film according to claim 1 , wherein the single-crystal metal catalyst layer is composed of a metal selected, from the group consisting of copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), platinum (Pt), palladium (Pd), gold (Au), silver (Ag), aluminum (Al), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), iridium (Ir), and zirconium (Zr).

6 . The large-area single-crystal monolayer graphene film according to claim 1 , wherein the single-crystal metal catalyst layer is in the shape of a foil, plate, block or tube.

7 . A method for producing a large-area single-crystal monolayer graphene film, comprising: i) preparing a polycrystalline metal precursor whose crystal planes are oriented in different directions without bias; ii) subjecting the metal precursor to annealing and in-situ chemical vapor deposition to form a single-crystal metal catalyst layer whose crystal plane orientation is (111); and iii) forming a graphene layer on the single-crystal metal catalyst layer.

8 . The method according to claim 7 , wherein the metal precursor prepared in step i) is selected from the group consisting of copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), platinum (Pt), palladium (Pd), gold (Au), silver (Ag), aluminum (Al), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), iridium (Ir), and zirconium (Zr).

9 . The method according to claim 7 , wherein the metal precursor prepared in step i) is in the shape of a foil, plate, block or tube.

10 . The method according to claim 7 , wherein the metal precursor prepared in step i) is a commercial copper foil.

11 . The method according to claim 10 , wherein the commercial copper foil has a thickness in the range of 5 μm to 18 μm.

12 . The method according to claim 7 , wherein, in step ii), the annealing is performed in a hydrogen or hydrogen/argon mixed was atmosphere at 900 to 1,200° C. and 1 to 760 torr for 1 to 5 hours.

13 . The method according to claim 12 , wherein the hydrogen atmosphere is created by feeding hydrogen at a flow rate of 10 to 100 sccm and the hydrogen/argon mixed gas atmosphere is created by feeding hydrogen at a flow rate of 10 to 100 sccm and argon at a flow rate of 10 to 100 sccm.

14 . The method according to claim 7 , wherein, in step ii), the chemical vapor deposition is performed in an atmosphere of a mixed gas of hydrogen and a carbon-containing gas at 900 to 1,200° C. and 0.1 torr to 760 torr for 10 minutes to 3 hours.

15 . The method according to claim 14 , wherein the atmosphere of a mixed gas of hydrogen and a carbon-containing gas is created by feeding hydrogen at a flow rate of 1 to 100 sccm and a carbon-containing gas at a flow rate of 10 to 100 sccm.

16 . The method according to claim 14 , wherein the carbon-containing gas is selected from the group consisting of hydrocarbon gases, gaseous hydrocarbon compounds, C 1 -C 6 gaseous alcohols, carbon monoxide, and mixtures thereof.

17 . The method according to claim 16 , wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, ethylene, propylene, butylene, acetylene, butadiene, and mixtures thereof.

18 . The method according to claim 16 , wherein the gaseous hydrocarbon compound is selected from the group consisting of pentane, hexane, cyclohexane, benzene, toluene, xylene, and mixtures thereof.

19 . The method according to claim 7 , further comprising artificially cooling the anal graphene film after step iii).

20 . The method according to claim 19 , wherein the cooling is slowly performed at a rate of 10 to 50° C./min.

21 . The method according to claim 19 , wherein the cooling is performed by feeding hydrogen at a flow rate of 10 to 1,000 sccm.

22 . A transparent electrode comprising the large-area single-crystal monolayer graphene film according to claim 1 .

23 . A display device comprising the large-area single-crystal monolayer graphene film according to claim 1 .

24 . A semiconductor device comprising the large-area single-crystal monolayer graphene film according to claim 1 .

25 . A separation membrane comprising the large-area single-crystal monolayer graphene film according to claim 1 .

26 . A fuel cell comprising the large-area single-crystal monolayer graphene film according to claim 1 .

27 . A solar cell comprising the large-area single-crystal monolayer graphene film according to claim 1 .

28 . A sensor comprising the large-area single-crystal monolayer graphene film according to claim 1 .

Assignees

• Iucf Hyu

Inventors

• Park Ho Bum
• Kim Hansu
• Yoon Hee Wook
• Park Sun Mi
• Lee Min Yong

Classifications

• H10P14/3406

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/3241

  being conductive materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10F77/244 Primary

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title