Method for forming pattern and catalyst and electronic element using method therefor

Patent metadata

Field	Value
Publication number	US-2016108536-A1
Application number	US-201314651903-A
Country	US
Kind code	A1
Filing date	Jul 25, 2013
Priority date	Jul 11, 2013
Publication date	Apr 21, 2016
Grant date	—

Abstract

Provided are a method for forming a pattern, and a catalyst and an electronic element using the method. The method for forming a pattern comprises the steps of: preparing, on a surface, a substrate sequentially including a photoconductive material layer and an oxide layer; making an area, on which a pattern is to be formed, on the oxide layer of the substrate, come into contact with an electrolyte; connecting the substrate and the electrolyte to a first electrode and a second electrode connected to a power source, respectively; and selectively irradiating light from a light source to the electrolyte and applying a voltage to the first electrode or the second electrode, thereby directly forming the pattern on the oxide layer of the substrate.

First claim

1 . A method for forming a pattern, the method comprises
preparing a substrate sequentially including a photoconductive material layer and an oxide layer on a surface of the substrate; making an area, on which a pattern is to be formed, on the oxide layer of the substrate, come into contact with an electrolyte; connecting the substrate and the electrolyte to a first electrode and a second electrode connected to a power source, respectively; and selectively irradiating light from a light source to the electrolyte and applying a voltage to the first electrode or the second electrode to form the pattern directly on the oxide layer of the substrate.

2 . The method of claim 1 , wherein the photoconductive material layer is comprises a first photoconductive material layer of a p-type or an n-type and a second photoconductive material layer of an intrinsic-type (i-type).

3 . The method of claim 2 , wherein the photoconductive material layer further comprises a third photoconductive material layer of an n-type or a p-type.

4 . The method of claim 1 , wherein the photoconductive material layer comprises at least one selected from crystalline silicon, amorphous silicon (a-Si), hydrogenated amorphous silicon (a-Si:H), amorphous germanium, hydrogenated amorphous germanium/silicon (a-Ge:H/a-Si—H), amorphous selenium (a-Se), amorphous gallium (a-Ga), amorphous hematite, and amorphous titanium oxide.

5 . The method of claim 1 , wherein a thickness of the photoconductive material layer is in a range of about 200 nm to about 900 nm.

6 . The method of claim 2 , wherein a thickness of the first photoconductive material layer is in a range of about 10 nm to about 30 nm.

7 . The method of claim 2 , wherein a thickness of the second photoconductive material layer is in a range of about 200 nm to about 700 nm.

8 . The method of claim 3 , wherein a thickness of the third photoconductive s material layer is in a range of about 50 nm to about 150 nm.

9 . The method of claim 1 , wherein the substrate is a conductive substrate.

10 . The method of claim 1 , wherein the substrate comprises metal, crystalline silicon, or indium tin oxide (ITO).

11 . The method of claim 1 , wherein a thickness of the substrate is in a range of about 100 nm to about 500 nm.

12 . The method of claim 1 , wherein the oxide layer comprises a native oxide layer, a SiO 2 layer, a Si 3 N 4 layer, or a HfO 2 layer.

13 . The method of claim 1 , wherein a thickness of the oxide layer is in a range of about 0.1 nm to about 3 nm.

14 . The method of claim 1 , wherein the electrolyte comprises at least one selected from a Pt precursor, a MoO y S z (where, 0≦y≦1 and 1.9≦z≦2.1) precursor, a CdSe precursor, and a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) precursor.

15 . The method of claim 1 , wherein a pH of the electrolyte is in a range of about 4 to about 7.

16 . The method of claim 1 , wherein the light source is one selected from a laser, a digital micromirror device (DMD), a liquid crystal display (LCD), a plasma display panel (PDP), a light-emitting diode (LED), and an organic light-emitting diode (OLED).

17 . The method of claim 1 , wherein a range of the applied voltage is in a range of about −0.7 V to about −0.4 V vs. an Ag/AgCl electrode.

18 . A catalyst prepared by using the method of claim 1 .

19 . An electronic element prepared by using the method of claim 1 .

20 . The electronic element of claim 19 , wherein the electronic element comprises an LED display, a solar cell, or a biosensor.

Assignees

• Snu R&Db Foundation
• Global Frontier Ct For Multiscale Energy Systems

Inventors

• Chung Taek Dong
• Lim Sung Yul

Classifications

• H10P14/3431

  Selenides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10P14/265

  using solutions · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title