Organic light emitting diode display and method for manufacturing organic light emitting diode display

Patent metadata

Field	Value
Publication number	US-2016104758-A1
Application number	US-201514729388-A
Country	US
Kind code	A1
Filing date	Jun 3, 2015
Priority date	Oct 8, 2014
Publication date	Apr 14, 2016
Grant date	—

Abstract

An organic light emitting device includes: a substrate; a first thin film transistor including a first active pattern positioned on the substrate and a first gate electrode positioned on the first active pattern; an organic light emitting element connected to the first active pattern; and a capacitor electrode overlapping the first gate electrode on the first gate electrode and having the same edge as the first gate electrode.

First claim

What is claimed is:

1 . An organic light emitting device comprising:
a substrate; a first thin film transistor including a first active pattern positioned on the substrate and a first gate electrode positioned on the first active pattern; an organic light emitting element connected to the first active pattern; and a capacitor electrode overlapping the first gate electrode and having the same edge as the first gate electrode.

2 . The organic light emitting device of claim 1 , wherein the first gate electrode and the capacitor electrode have the same edge in a plane view.

3 . The organic light emitting device of claim 1 , comprising a capacitor formed by the first gate electrode and the capacitor electrode.

4 . The organic light emitting device of claim 1 , wherein the first gate electrode and the capacitor electrode each include a metal.

5 . The organic light emitting device of claim 1 , wherein the capacitor electrode has an island shape.

6 . The organic light emitting device of claim 1 , wherein a channel region of the first active pattern overlapping the first gate electrode has a shape that is bent and extends at least once.

7 . The organic light emitting device of claim 1 , further comprising:
a second thin film transistor including a second active pattern connected to the first active pattern and a second gate electrode positioned on the second active pattern; a third thin film transistor including a third active pattern connecting between the first active pattern and the first gate electrode and a third gate electrode positioned on the third active pattern; a first scan line positioned on the second active pattern to respectively cross the second active pattern and the third active pattern and connected to the second gate electrode and the third gate electrode; a data line positioned on the first scan line to cross the first scan line and connected to the second active pattern; and a driving power source line positioned on the first scan line to be separated from the data line and to cross the first scan line and connected to the capacitor electrode and the first active pattern.

8 . The organic light emitting device of claim 7 , further comprising
a gate bridge positioned on the first scan line to be separated from the driving power source line and connecting the third active pattern and the first gate electrode.

9 . The organic light emitting device of claim 8 , wherein
the capacitor electrode includes an opening exposing a portion of the first gate electrode, and the gate bridge is connected to the first gate electrode through the opening.

10 . The organic light emitting device of claim 8 , wherein
the first active pattern, the second active pattern, and the third active pattern are respectively positioned with the same layer, and the data line, the driving power source line, and the gate bridge are respectively positioned with the same layer.

11 . The organic light emitting device of claim 7 , further comprising:
a fourth thin film transistor including a fourth active pattern connected to the first gate electrode and the third active pattern and a fourth gate electrode positioned on the fourth active pattern; a second scan line positioned on the fourth active pattern to cross the fourth active pattern and connected to the fourth gate electrode; and an initialization power source line positioned on the second scan line and connected to the fourth active pattern.

12 . The organic light emitting device of claim 11 , wherein
the first gate electrode, the second gate electrode, the third gate electrode, the fourth gate electrode, the first scan line, and the second scan line are respectively positioned with the same layer.

13 . The organic light emitting device of claim 11 , further comprising:
a seventh thin film transistor including a seventh active pattern connected to the fourth active pattern and a seventh gate electrode positioned on the seventh active pattern; and a third scan line positioned on the seventh active pattern to cross the seventh active pattern and connected to the seventh gate electrode.

14 . The organic light emitting device of claim 7 , further comprising:
a fifth thin film transistor including a fifth active pattern connecting between the first active pattern and the driving power source line and a fifth gate electrode positioned on the fifth active pattern; a sixth thin film transistor including a sixth active pattern connecting between the first active pattern and the organic light emitting element and a sixth gate electrode positioned on the sixth active pattern; and an emission control line positioned on the fifth active pattern and the sixth active pattern to respectively cross the fifth active pattern and the sixth active pattern and respectively connected to the fifth gate electrode and the sixth gate electrode.

15 . The organic light emitting device of claim 14 , wherein
the first gate electrode, the second gate electrode, the third gate electrode, the fifth gate electrode, the sixth gate electrode, and the emission control line are respectively positioned with the same layer.

16 . A method for manufacturing an organic light emitting device, comprising:
forming a first active pattern and a second active pattern connected to the first active pattern on a substrate; sequentially forming a first metal layer, an insulating layer, and a second metal layer on the first active pattern and the second active pattern; forming a first photoresist pattern having a first thickness on the second metal layer corresponding to the first active pattern and a second photoresist pattern having a second thickness thinner than the first thickness on the second metal layer corresponding to the second active pattern; etching the first metal layer, the insulating layer, and the second metal layer by using the first photoresist pattern and the second photoresist pattern as a mask; removing the second photoresist pattern and exposing the second metal layer positioned on the second active pattern; and removing the insulating layer and the second metal layer positioned on the second active pattern.

17 . The method of claim 16 , wherein
the first photoresist pattern and the second photoresist pattern are formed by using a halftone mask.

18 . The method of claim 16 , wherein
the first metal layer, the insulating layer, and the second metal layer are etched by using dry etching.

19 . The method of claim 18 , wherein
the first metal layer, the insulating layer, and the second metal layer are etched to form a first gate electrode from the first metal layer on the first active pattern and a capacitor electrode having the same edge as the first gate electrode from the second metal layer and to simultaneously form a second gate electrode from the first metal layer on the second active pattern.

20 . The method of claim 19 , wherein
the insulating layer and the second metal layer positioned on the second gate electrode are removed to remove the second metal layer.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Hyun Tae

Classifications

• H10D1/692

  Electrodes · CPC title

• H10K59/1216 Primary

  the pixel elements being capacitors · CPC title

• H01L51/56

  Electricity · mapped topic

• H01L27/3265

  Electricity · mapped topic

• H01L27/3276 Primary

  Electricity · mapped topic