Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016104718-A1
Application number	US-201514616812-A
Country	US
Kind code	A1
Filing date	Feb 9, 2015
Priority date	Oct 10, 2014
Publication date	Apr 14, 2016
Grant date	—

Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes etching an etching target layer under a mask layer using a first gas. The mask layer includes a plurality of first layers, one or more second layers, and a mask hole piercing through the plurality of first layers and the one or more second layers. The method includes etching an outermost first layer exposed to an outermost layer of the mask layer among the plurality of first layers using a second gas, and exposing a layer directly under the outermost first layer. The etching using the first gas and the etching using the second gas are repeated to form a hole in the etching target layer.

First claim

What is claimed is:

1 . A method for manufacturing a semiconductor device comprising:
etching an etching target layer under a mask layer using a first gas, the mask layer including a plurality of first layers, one or more second layers including a second layer provided between adjacent first layers and having a material different from a material of the first layers, and a mask hole piercing through the plurality of first layers and the one or more second layers; and etching an outermost first layer exposed to an outermost layer of the mask layer among the plurality of first layers using a second gas, and exposing a layer directly under the outermost first layer, the etching using the first gas and the etching using the second gas being repeated to form a hole in the etching target layer.

2 . The method according to claim 1 , wherein
a third layer is formed above the mask layer, the third layer having a thickness thicker than a total thickness of the one or more second layers and having a same material as the material of the second layer, and the mask hole is formed in the mask layer by etching using the third layer as a mask.

3 . The method according to claim 1 , wherein the first gas is switched to the second gas to etch the outermost first layer when fluctuation occurs in height of an upper surface of the outermost first layer during the etching using the first gas before the outermost first layer disappears.

4 . The method according to claim 1 , wherein
the first layer contains carbon as a main component, the second layer contains silicon oxide or silicon as a main component, and the second gas contains at least any one of oxygen, hydrogen, and ammonium.

5 . The method according to claim 1 , wherein
the first layer contains silicon as a main component, the second layer contains silicon oxide as a main component, and the second gas contains hydrogen bromide.

6 . The method according to claim 1 , wherein the etching target layer includes a plurality of fourth layers and a plurality of fifth layers including a fourth layer provided between the fifth layers.

7 . The method according to claim 6 , wherein
the fourth layers contain silicon nitride as a main component, the fifth layers contain silicon oxide as a main component, and the first gas contains fluorocarbon or hydro fluorocarbon.

8 . The method according to claim 6 , further comprising:
forming a slit in the etching target layer; removing the fourth layers with etching through the slit; and forming electrode layers in spaces formed by removing the fourth layers.

9 . The method according to claim 8 , further comprising:
forming a film including a charge storage film on a sidewall of the hole; and forming a channel film on a sidewall of the film including the charge storage film.

10 . A method for manufacturing a semiconductor device comprising:
etching an etching target layer under a mask layer using a first gas, the mask layer including a plurality of first layers, a plurality of second layers including a second layer provided between the first layers and having a material different from a material of the first layers, a first mask hole piercing through the plurality of first layers and the plurality of second layers, and a second mask hole shallower than the first mask hole; and etching an outermost first layer exposed to an outermost layer of the mask layer among the plurality of first layers and a portion under the second mask hole in a first layer under the outermost first layer using a second gas, and exposing a second layer directly under the outermost first layer and a portion under the second mask hole in a second layer under the second layer directly under the outermost first layer, the etching using the first gas and the etching using the second gas being repeated to form a hole in the etching target layer under the first mask hole and not form a hole in the etching target layer under the second mask hole.

11 . The method according to claim 10 , wherein the first mask hole and the second mask hole are cyclically arrayed.

12 . The method according to claim 10 , wherein
a projected section is formed in a top second layer in the mask layer, a top first layer is formed on the top second layer to cover the projected section, and the second mask hole pierces through the top first layer on the projected section and reaches the projected section.

13 . The method according to claim 12 , wherein
the first mask hole and the second mask hole are formed by etching using a third layer as a mask, the third layer being formed above the top first layer, and the third layer has a same material as the material of the second layer, and has thickness thicker than a total thickness of the plurality of second layers.

14 . The method according to claim 13 , wherein the projected section remains under the second mask hole in a state in which the first mask hole pierces through the mask layer.

15 . The method according to claim 10 , wherein
the first layer contains carbon as a main component, the second layer contains silicon oxide or silicon as a main component, and the second gas contains at least any one of oxygen, hydrogen, and ammonium.

16 . The method according to claim 10 , wherein
the first layer contains silicon as a main component, the second layer contains silicon oxide as a main component, and the second gas contains hydrogen bromide.

17 . The method according to claim 10 , wherein the etching target layer includes a plurality of fourth layers and a plurality of fifth layers including a fourth layer provided between the fifth layers.

18 . The method according to claim 17 , wherein
the fourth layers contain silicon nitride as a main component, the fifth layers contain silicon oxide as a main component, and the first gas contains fluorocarbon or hydro fluorocarbon.

19 . The method according to claim 17 , further comprising:
forming a slit in the etching target layer; removing the fourth layers with etching through the slit; and forming electrode layers in spaces formed by removing the fourth layers.

20 . The method according to claim 19 , further comprising:
forming a film including a charge storage film on a sidewall of the hole; and forming a channel film on a sidewall of the film including the charge storage film.

Assignees

• Toshiba Kk

Inventors

• Omura Mitsuhiro
• Furumoto Kazuhito

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H01L21/28282

  Electricity · mapped topic

• H01L27/11556

  Electricity · mapped topic