Fin-shaped field-effect transistor with a germanium epitaxial cap and a method for fabricating the same

Patent metadata

Field	Value
Publication number	US-2016104673-A1
Application number	US-201414510119-A
Country	US
Kind code	A1
Filing date	Oct 9, 2014
Priority date	Oct 9, 2014
Publication date	Apr 14, 2016
Grant date	—

Abstract

A FinFET includes a fin-shaped structure, a gate structure, an epitaxial layer, an interlayer dielectric layer, an opening, a germanium cap and a contact plug. The fin-shaped structure is disposed on the substrate. The gate structure covers a portion of the fin-shaped structure. The epitaxial layer is disposed on the fin-shaped structure adjacent to the gate structure. The interlayer dielectric layer covers the gate structure and the epitaxial layer. The opening is in the interlayer dielectric layer. The germanium cap fills the bottom of the opening and has a germanium concentration in excess of 50 atomic %. The contact plug is disposed on the germanium cap in the opening.

First claim

1 . A fin-shaped field-effect transistor (FinFET), comprising:
a fin-shaped structure disposed on a substrate; a gate structure covering a portion of the fin-shaped structure; an epitaxial layer disposed on the fin-shaped structure adjacent to the gate structure; an interlayer dielectric layer covering the gate structure and the epitaxial layer; an opening in the interlayer dielectric layer; a germanium cap at the bottom of the opening, wherein the germanium cap has a germanium concentration in excess of 50 atomic %; a silicon cap disposed in the opening and between the germanium cap and the fin-shaped structure; and a contact plug disposed on the germanium cap in the opening.

2 . (canceled)

3 . The FinFET of claim 1 , wherein a thickness of germanium cap is thicker than a thickness of the silicon cap.

4 . The FinFET of claim 1 , wherein a thickness of the germanium cap is 3 times thicker than a thickness of the silicon cap.

5 . The FinFET of claim 1 , wherein the germanium cap and the silicon cap are disposed above the surface of the substrate.

6 . The FinFET of claim 1 , wherein the germanium cap has a germanium concentration in excess of 90 atomic %.

7 . The FinFET of claim 1 , wherein the silicon cap has a germanium concentration less than a germanium concentration of the germanium cap.

8 . The FinFET of claim 1 , further comprising a metal germanide or a metal silicide disposed between the contact plug and the germanium cap.

9 . The FinFET of claim 8 , wherein the metal germanide or the metal silicide are disposed on a top surface of the germanium cap.

10 . The FinFET of claim 1 , wherein the germanium cap is a boron-doped germanium cap, and a boron concentration near a top surface of the germanium cap is in excess of 1E20 cm −3 .

11 . The FinFET of claim 10 , wherein a boron concentration of the germanium cap is gradually increased from the bottom of the germanium cap to the top of the germanium cap.

12 . The FinFET of claim 1 , wherein the contact plug comprises tungsten.

13 . A method for fabricating a fin-shaped field-effect transistor (FinFET), comprising:
providing a substrate; forming a fin-shaped structure on the substrate; forming a gate structure on the fin-shaped structure; forming an epitaxial layer in the fin-shaped structure adjacent to the gate structure; forming an interlayer dielectric layer on the gate structure and the epitaxial layer; forming an opening in the interlayer dielectric layer; forming a germanium cap at the bottom of the opening, wherein the germanium cap has a germanium concentration in excess of 50 atomic %; forming a silicon cap layer on the epitaxial layer between the steps of forming the opening and forming the germanium cap; and forming a contact plug on the germanium cap in the opening.

14 . (canceled)

15 . The method for fabricating the FinFET of claim 13 , wherein the silicon cap has a germanium concentration less than a germanium concentration of the germanium cap.

16 . (canceled)

17 . The method for fabricating the FinFET of claim 13 , further comprising forming a metal germanide or a metal silicide at a top surface of the germanium cap.

18 . The method for fabricating the FinFET of claim 13 , further comprising:
depositing a metal layer on the germanium cap; and reacting the metal layer with the germanium cap so as to produce a metal germanide or a metal silicide.

19 . The method for fabricating the FinFET of claim 13 , wherein the germanium cap is a boron-doped germanium cap, and a boron concentration near a top surface of the germanium cap is in excess of 1E20 cm −3 .

20 . The method for fabricating the FinFET of claim 19 , wherein a boron concentration of the germanium cap is gradually increased from the bottom of the germanium cap to the top of the germanium cap.

Assignees

• United Microelectronics Corp

Inventors

• Tung Yu-Cheng

Classifications

• H10D64/0113

  the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10D86/215

  comprising FinFETs · CPC title

• H10D84/853

  comprising FinFETs · CPC title