Yttria based conductive plasma-resistant member and methods thereof

US2016104551A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016104551-A1
Application numberUS-201514879789-A
CountryUS
Kind codeA1
Filing dateOct 9, 2015
Priority dateOct 10, 2014
Publication dateApr 14, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention discloses a conductive plasma-resistant member including an yttrium oxide. The plasma-resistant member of the present invention includes an yttrium compound which includes a matrix phase consisting of yttrium oxides, and a conductive dispersed phase. According to the present invention, the present invention provides a semiconductor-grade yttria composite which may be used as a plasma-resistant member requiring conductivity like a focus ring.

First claim

Opening claim text (preview).

What is claimed is: 1 . A plasma-resistant member comprising an yttrium compound, comprising: a matrix phase consisting of yttrium oxides; and a conductive dispersed phase. 2 . The plasma-resistant member of claim 1 , wherein the conductive dispersed phase comprises a carbide or nitride of at least one metal selected from a group consisting of Ti, Zr and Hf. 3 . The plasma-resistant member of claim 1 , wherein the conductive dispersed phase comprises at least one carbon-based additive selected from a group consisting of CNT, graphene and particulate carbon. 4 . The plasma-resistant member of claim 1 , comprising: a body; and a coating layer surrounding the body, wherein the coating layer comprises a matrix phase consisting of yttrium oxides and a conductive dispersed phase. 5 . The plasma-resistant member of claim 1 , wherein the yttrium oxide comprises yttria (Y 2 O 3 ). 6 . The plasma-resistant member of claim 1 , wherein the yttrium oxide comprises yttrium aluminum garnet (YAG). 7 . The plasma-resistant member of claim 5 , wherein the matrix phase further comprises zirconia or alumina. 8 . The plasma-resistant member of claim 1 , wherein the plasma-resistant member comprises at least 5% by volume of the dispersed phase. 9 . The plasma-resistant member of claim 1 , wherein plasma-resistant member comprises 30% by volume or less of the dispersed phase. 10 . The plasma-resistant member of claim 1 , wherein the plasma-resistant member has a conductivity in the range of 10 −7 ˜10 −2 S/cm. 11 . The plasma-resistant member of claim 1 , wherein the plasma-resistant member has a relative density of at least 95%. 12 . A method of producing a plasma-resistant member comprising an yttrium compound, comprising: providing a powder mixture of an yttrium oxide and a conductive material; molding the powder mixture to produce a molded product; and sintering the molded product under a nitrogen atmosphere. 13 . The method of claim 12 , wherein the conductive material comprises a carbide or nitride of at least one metal selected from a group consisting of Ti, Zr and Hf. 14 . The method of claim 12 , wherein the sintering is performed under atmospheric pressure or vacuum. 15 . The method of claim 12 , wherein the sintering is performed at a temperature of 1700˜1900° C. 16 . The method of claim 12 , wherein the sintering is performed by spark plasma sintering (SPS). 17 . A method of producing a plasma-resistant member comprising an yttrium compound, comprising: molding a powder mixture of a yttrium oxide and a carbide or nitride of at least one metal selected from a group consisting of Ti, Zr and Hf to produce a molded product; calcining the molded product; and sintering the molded product under a nitrogen atmosphere. 18 . The plasma-resistant member of claim 6 , wherein the matrix phase further comprises zirconia or alumina.

Assignees

Inventors

Classifications

  • based on titanium carbides · CPC title

  • H01B1/16Primary

    the conductive material comprising metals or alloys · CPC title

  • based on zirconium or hafnium carbides · CPC title

  • Refractory metal nitrides, e.g. vanadium nitride, tungsten nitride · CPC title

  • Atmosphere during thermal treatment · CPC title

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What does patent US2016104551A1 cover?
The present invention discloses a conductive plasma-resistant member including an yttrium oxide. The plasma-resistant member of the present invention includes an yttrium compound which includes a matrix phase consisting of yttrium oxides, and a conductive dispersed phase. According to the present invention, the present invention provides a semiconductor-grade yttria composite which may be used …
Who is the assignee on this patent?
Korea Mach & Materials Inst
What technology area does this patent fall under?
Primary CPC classification H01B1/16. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Apr 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).