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Vapor phase growth apparatus and vapor phase growth method
US2016102401A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016102401-A1 |
| Application number | US-201514877040-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 7, 2015 |
| Priority date | Oct 9, 2014 |
| Publication date | Apr 14, 2016 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
A vapor phase growth apparatus includes a reaction chamber, a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber, a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group III element to the reaction chamber, a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber, a first connection path connecting the first gas supply path and the second gas supply path, and a first control unit controlling the passage and stop of gas through the first connection path.
First claim
Opening claim text (preview).
What is claimed is: 1 . A vapor phase growth apparatus comprising: a reaction chamber; a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber; a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group element to the reaction chamber; a second gas supply path connected to the second…
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Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
- C23C16/45561Primary
Chemistry & Metallurgy · mapped topic
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- What does patent US2016102401A1 cover?
- A vapor phase growth apparatus includes a reaction chamber, a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber, a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group III element to the reaction …
- Who is the assignee on this patent?
- Nuflare Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification C23C16/45561. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Apr 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).