Method for producing granular polysilicon
US-2016326001-A1 · Nov 10, 2016 · US
US2016101982A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016101982-A1 |
| Application number | US-201414889347-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 28, 2014 |
| Priority date | May 6, 2013 |
| Publication date | Apr 14, 2016 |
| Grant date | — |
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The fluidized bed process for preparing polysilicon by chemical vapor deposition is improved by positioning at least one Laval nozzle upstream from a gas inlet into the reactor.
Opening claim text (preview).
1 .- 10 . (canceled) 11 . A fluidized bed reactor for producing granular polysilicon, comprising: a vessel having an inner reactor tube for a fluidized bed of granular polysilicon, and a reactor base; a heating device for heating the fluidized bed in the inner reactor tube; at least one opening in the reactor base for feeding fluidizing gas, and at least one opening in the reactor base for feeding reaction gas; a device for removing reactor offgas; a feed apparatus for feeding silicon seed particles; and a withdrawal conduit for granular polysilicon product, wherein a Laval nozzle is situated upstream of at least one of the openings in the reactor base, suitable for supercritically expanding at least one mass stream fed to the fluidized bed reactor. 12 . The fluidized bed reactor of claim 11 , which has at least two openings in the reactor base, each opening having a Laval nozzle situated upstream from the opening. 13 . The fluidized bed reactor of claim 11 , which has one or more groups of openings in the reactor base, each group comprising at least two openings, wherein a Laval nozzle is situated upstream of each group of openings. 14 . The fluidized bed reactor of claim 11 , comprising one or more groups of openings in the reactor base, each group comprising at least two openings, wherein one Laval nozzle is situated upstream of each opening, and at least one further Laval nozzle upstream of said one Laval nozzle upstream of said each opening. 15 . The fluidized bed reactor of claim 11 , wherein the at least one opening in the reactor base upstream of which a Laval nozzle is situated comprises a gas distributor. 16 . The fluidized bed reactor of claim 11 , wherein the at least one opening in the reactor base upstream of which a Laval nozzle is situated comprises a hole in the base plate, a valve, or a nozzle. 17 . A method for producing granular polysilicon in a fluidized bed reactor, comprising fluidizing silicon particles by means of a fluidizing gas that is fed via at least one opening in the reactor base of the fluidized bed reactor, forming a fluidized bed which is heated via a heater to a temperature of 850-1200° C., feeding a silicon-containing reaction gas via at least one opening in the reactor base of the fluidized bed reactor, and depositing silicon onto the silicon particles, wherein at least one mass stream of fluidizing gas or reaction gas fed to the fluidized bed reactor is expanded supercritically, by a Laval nozzle situated upstream of at least one of the openings in the reactor base which expands the at least one mass stream by overpressure prevailing in the Laval nozzle. 18 . The method of claim 17 , wherein the fluidizing gas is H 2 and the silicon-containing reaction gas is TCS. 19 . The method of claim 17 , wherein a fluidized bed reactor of claim 11 is employed as a fluidized bed reactor.
Discharging · CPC title
Details of the fluidised bed reactor (B01J8/1836 takes precedence) · CPC title
Feeding · CPC title
Heating and cooling the reactor (B01J8/42 takes precedence) · CPC title
Deposition of silicon only · CPC title
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