Light emitting device and light emitting device array

Patent metadata

Field	Value
Publication number	US-2016093667-A1
Application number	US-201514962083-A
Country	US
Kind code	A1
Filing date	Dec 8, 2015
Priority date	Nov 5, 2012
Publication date	Mar 31, 2016
Grant date	—

Abstract

A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

First claim

What is claimed is:

1 . A light emitting device, comprising:
a substrate; a light emitting structure including lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers, the light emitting structure being disposed on the substrate; a first electrode disposed on the upper semiconductor layer; and a current blocking layer disposed between the upper semiconductor layer and the first electrode, wherein the first electrode includes a first adhesive layer and a first bonding layer overlapping each other, wherein a reflective layer is not disposed between the first adhesive layer and the first bonding layer, and wherein the first adhesive layer is disposed to surround upper and side parts of the current blocking layer.

2 . The light emitting device according to claim 1 , wherein the first electrode further comprises a first barrier layer disposed on the first adhesive layer with contacting the first adhesive layer.

3 . The light emitting device according to claim 1 , further comprising a second electrode disposed on the lower semiconductor layer,
wherein the second electroder includes a second adhesive layer and a second bonding layer overlapping each other, and wherein a reflective layer is not disposed between the second adhesive layer and the second bonding layer.

4 . The light emitting device according to claim 3 , wherein the second electrode further comprises a second barrier layer disposed on the second adhesive layer with contacting the second adhesive layer.

5 . The light emitting device according to claim 1 , wherein the first adhesive layer comprises at least one of Cr, Rd, or Ti.

6 . The light emitting device according to claim 2 , wherein the first barrier layer comprises at least one of Ni, Cr, Ti, or Pt.

7 . The light emitting device according to claim 1 , wherein the first adhesive layer has a thickness of at least 2 nm to 15 nm.

8 . The light emitting device according to claim 1 , wherein the first bonding layer has a thickness of 100 nm to 2,000 nm.

9 . The light emitting device according to claim 1 , wherein the first electrode has a width of 5 μm to 100 μm.

10 . A light emitting device array, comprising:
a substrate; a plurality of light emitting devices spaced from one another in a horizontal direction on the substrate; a conductive interconnection layer to connect two light emitting devices among the plurality of light emitting devices; and a first insulating layer disposed between the light emitting devices and the conductive interconnection layer, wherein respective light emitting devices comprise: a light emitting structure including lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers; a first electrode disposed on the upper semiconductor layer; a second electrode disposed on the lower semiconductor layer; and a current blocking layer disposed between the light emitting structure and the first electrode, wherein the conductive interconnection layer connects the first electrode of one of the two light emitting devices to the second electrode of the other of the two light emitting devices, wherein the first electrode includes a first adhesive layer and a first bonding layer overlapping each other, wherein a reflective layer is not disposed between the first adhesive layer and the first bonding layer, and wherein the first adhesive layer is disposed to surround upper and side parts of the current blocking layer.

11 . The light emitting device array according to claim 10 , wherein the conductive interconnection layer comprises a third adhesive layer and a third bonding layer overlapping each other, and
wherein a reflective layer is not disposed between the third adhesive layer and the third bonding layer.

12 . The light emitting device array according to claim 11 , wherein the conductive interconnection layer further comprises a third barrier layer on the third adhesive layer with contacting the third adhesive layer.

13 . The light emitting device array according to claim 10 , further comprising a second insulating layer disposed between the first insulating layer and the light emitting devices.

14 . The light emitting device array according to claim 13 , wherein at least one of the first insulating layer or second insulating layer is a distributed Bragg reflector.

15 . The light emitting device array according to claim 10 , wherein the first and second electrode of the two light emitting devices connected through the conductive interconnection layer and the conductive interconnection layer are integrated with one another.

16 . The light emitting device array according to claim 10 , wherein each light emitting device further comprises a conductive layer disposed between the upper semiconductor layer and the first electrode.

17 . The light emitting device array according to claim 16 , wherein the conductive interconnection layer point-contacts the conductive layer or the lower semiconductor layer.

18 . The light emitting device array according to claim 16 , wherein the current blocking layer is spaced from the first insulating layer between the light emitting structure and the first electrode.

19 . The light emitting device array according to claim 10 , wherein a thickness of the conductive interconnection layer is greater than that of the first electrode.

20 . The light emitting device array according to claim 10 , wherein the current blocking layer includes a distributed Bragg Reflector.

Assignees

• Lg Innotek Co Ltd

Inventors

• Choi Byung Yeon
• Beom Hee Young
• Lee Yong Gyeong
• Lee Ji Hwan
• Ju Hyun Seoung
• Hong Gi Seok

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/832 Primary

  characterised by their material · CPC title