Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin Film Transistors

Patent metadata

Field	Value
Publication number	US-2016072085-A1
Application number	US-201514848281-A
Country	US
Kind code	A1
Filing date	Sep 8, 2015
Priority date	May 19, 2010
Publication date	Mar 10, 2016
Grant date	—

Abstract

Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.

First claim

What is claimed is:

1 . A method of fabricating a thin film transistor comprising an organic-inorganic hybrid multilayer dielectric material, a gate electrode in contact with the organic-inorganic hybrid multilayer dielectric material, a thin film semiconductor, and source and drain electrodes in contact with the thin film semiconductor, wherein the organic-inorganic hybrid multilayer dielectric material comprises an inorganic primer layer and one or more bilayers deposited thereon, each bilayer comprising a π-polarizable layer and an inorganic oxide capping layer, wherein the inorganic oxide capping layer in each bilayer is coupled to the π-polarizable layer via bonds other than phosphonate bonds, the method comprising:
assembling the organic-inorganic hybrid multilayer dielectric material by performing one or more times the steps of (a) coupling a π-polarizable layer to either an existing inorganic primer layer or an existing inorganic oxide capping layer; and (b) coupling a new inorganic oxide capping layer to the π-polarizable layer via bonds other than phosphonate bonds;
depositing a thin film semiconductor either directly adjacent to the organic-inorganic hybrid multilayer dielectric material or indirectly adjacent to the organic-inorganic hybrid multilayer dielectric material via an interlayer;
forming source and drain electrodes in contact with the thin film semiconductor; and
providing a gate electrode in contact with the organic-inorganic hybrid multilayer dielectric material.

2 . The method of claim 1 , wherein coupling the new inorganic oxide capping layer to the π-polarizable layer comprises contacting the π-polarizable layer with a zirconia sol.

3 . The method of claim 2 , wherein the zirconia sol comprises a zirconium compound in an alcohol solvent or a solvent mixture comprising an alcohol.

4 . The method of claim 3 , wherein the zirconium compound is selected from ZrCl 4 , ZrOCl 2 , and Zr(OR) 4 , wherein each R independently is a C 1-6 alkyl group.

5 . The method of claim 1 , wherein coupling the new inorganic oxide capping layer to the π-polarizable layer comprises spin-coating a zirconia sol on the π-polarizable layer and annealing at a temperature between about 100° C. and about 400° C.

6 . The method of claim 1 , comprising forming an inorganic primer layer on a substrate and coupling one of the π-polarizable layers to the inorganic primer layer.

7 . The method of claim 6 , wherein forming the inorganic primer layer on the substrate comprises spin-coating a zirconia sol on the substrate and annealing at a temperature between about 100° C. and about 400° C.

8 . The method of claim 1 , comprising performing steps (a) and (b) two or more times.

9 . The method of claim 1 , wherein the organic-inorganic hybrid multilayer dielectric material is assembled on the gate electrode.

10 . The method of claim 1 , wherein the thin film semiconductor comprises an organic compound selected from the group consisting of a semiconducting molecule and a semiconducting polymer.

11 . The method of claim 10 , wherein the organic compound comprises fused heterocycles, aromatic hydrocarbons, polythiophenes, or fused heteroaromatics.

12 . The method of claim 10 , wherein the thin film semiconductor is deposited by vapor deposition, spin-coating, or printing.

13 . The method of claim 10 comprising assembling a monolayer between the organic-inorganic hybrid multilayer dielectric material and the thin film semiconductor.

14 . The method of claim 13 , wherein the monolayer is prepared with an n-alkylphosphonic acid precursor.

15 . The method of claim 1 , wherein the thin film semiconductor comprises a semiconducting metal oxide selected from the group consisting of indium oxide (In 2 O 3 ), indium zinc oxide (IZO), zinc tin oxide (ZTO), indium gallium oxide (IGO), indium-gallium-zinc oxide (IGZO), tin oxide (SnO 2 ), and zinc oxide (ZnO).

16 . The method of claim 15 , wherein the thin film semiconductor is deposited by a solution-phase method.

Assignees

• Univ Northwestern

Inventors

• Marks Tobin J
• Ha Young-Geun
• Facchetti Antonio

Classifications

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title

• H10D64/685

  being perpendicular to the channel plane · CPC title

• H10D62/80

  characterised by the materials · CPC title