Semiconductor light emitting element

Patent metadata

Field	Value
Publication number	US-2016072019-A1
Application number	US-201514634878-A
Country	US
Kind code	A1
Filing date	Mar 1, 2015
Priority date	Sep 4, 2014
Publication date	Mar 10, 2016
Grant date	—

Abstract

A semiconductor light emitting element of an embodiment includes a laminated body having first, second, and third semiconductor layers stacked on each other in a first direction, the third semiconductor layer being between the first and second semiconductor layers in the first direction. The laminated body includes a first region and a second region spaced from the first region a second direction which intersects the first direction. The first electrode is electrically connected to the first semiconductor layer. The second electrode is disposed between the first region and the second region along the second direction. The first conductive layer electrically connects the second semiconductor layer and the second electrode to each other. An outer edge of the first conductive layer is positioned inside an outer edge of the laminated body.

First claim

What is claimed is:

1 . A semiconductor light emitting element comprising:
a laminated body including:
a first semiconductor layer,
a second semiconductor layer, and
a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated body including a first region and a second region that is lined up with the first region in a second direction which intersects with a first direction along which the second semiconductor layer, and the first semiconductor layer are laminated to each other;
a first electrode electrically connected to the first semiconductor layer; a second electrode disposed between the first region and the second region; and a first conductive layer connecting the second semiconductor layer and the second electrode to each other, wherein a first outer edge of the first conductive layer is positioned inside a second outer edge of the laminated body.

2 . The semiconductor light emitting element according to claim 1 , further comprising:
a first insulation layer, wherein at least apart of the first conductive layer is disposed between the second semiconductor layer and the first insulation layer in the first direction, and the first insulation film is directly adjacent to the first outer edge of the first conductive layer in the second direction.

3 . The semiconductor light emitting element according to claim 2 , further comprising:
a base body, wherein the first conductive layer is disposed between the base body and the laminated body, and the first insulation layer is disposed between the base body and the first conductive layer.

4 . The semiconductor light emitting element according to claim 3 , further comprising:
a bonding layer disposed between the base body and the first insulation layer, the bonding layer connecting the base body and the first insulation layer to each other.

5 . The semiconductor light emitting element according to claim 2 , wherein
the laminated body is disposed between the first electrode and the first conductive layer in the first direction.

6 . The semiconductor light emitting element according to claim 1 , wherein
the laminated body is disposed between the first electrode and the first conductive layer in the first direction.

7 . The semiconductor light emitting element according to claim 1 , wherein
the laminated body has a first surface and a second surface opposite the first surface, the first semiconductor layer is directly adjacent the first surface and includes a first portion directly adjacent to the third semiconductor layer in the first direction and a second portion spaced from the third semiconductor layer in the first direction by the first portion, and the first electrode is connected to the second portion of the first semiconductor layer such that the second portion is between the first surface and the first electrode along the first direction.

8 . The semiconductor light emitting element according to claim 7 , further comprising:
a second conductive layer, wherein the first conductive layer is disposed between the second conductive layer and the second semiconductor layer in the first direction, the first insulation layer is disposed between the second conductive layer and the first conductive layer in the first direction, and the first electrode is disposed between the second portion and the second conductive layer.

9 . The semiconductor light emitting element according to claim 7 , wherein the first insulation layer covers an edge portion of the second semiconductor layer and an edge portion of the third semiconductor layer.

10 . The semiconductor light emitting element according to claim 7 , wherein
a first part of the second semiconductor layer is directly adjacent the first conductive layer, and a second part of the second semiconductor layer is directly adjacent the first insulation layer.

11 . The semiconductor light emitting element according to claim 1 , further comprising:
a second insulation layer between the first region and the second electrode and between the second region and the second electrode.

12 . The semiconductor light emitting element according to claim 1 , further comprising:
a second insulation layer that covers a side surface of the laminated body, a part of the second insulation layer being in contact with the first insulation layer.

13 . The semiconductor light emitting element according to claim 1 , further comprising:
a metal layer disposed between the second semiconductor layer and the first conductive layer in the first direction, wherein a reflectance of the metal layer for a light emitted from the third semiconductor layer is higher than a reflectance of the first conductive layer for the light emitted from the third semiconductor layer.

14 . The semiconductor light emitting element according to claim 13 , wherein
the metal layer includes at least one metal selected from a group consisting of silver, rhodium, and a silver alloy.

15 . The semiconductor light emitting element according to claim 1 , wherein
the first conductive layer includes at least one metal selected from a group consisting of silver, rhodium, aluminum, copper, and gold.

16 . The semiconductor light emitting element according to claim 1 , wherein
a distance along the second direction from the first outer edge of the first conductive layer to the second outer edge of the laminated body is in a range of 0.2 to 5 times a thickness of the laminated body in the first direction.

17 . The semiconductor light emitting element according to claim 1 , wherein
a distance along the second direction from the first outer edge of the first conductive layer to the second outer edge of the laminated body is 0.1 μm to 10 μm.

18 . A semiconductor light emitting element, comprising:
a laminated body including
a first semiconductor layer,
a second semiconductor layer, and
a third semiconductor layer disposed between, along a first direction, at least a part of the first semiconductor layer and the second semiconductor layer;
a first electrode electrically connected to the first semiconductor layer; a second electrode extending in the first direction into the laminated body; and a first conductive layer extending along a first plane which crosses the first direction, and electrically connecting the second semiconductor layer and the second electrode, wherein the first conductive layer extends within the first plane to a first outer edge of the first conductive layer, and the laminated body extends along a second plane that is parallel to the first plane to a second outer edge of the laminated body such that a straight line extending along the first direction from the first outer edge crosses the laminated body.

19 . The semiconductor light emitting element according to claim 18 , wherein
the laminated body has a first surface and a second surface opposite the first surface, the first semiconductor layer is directly adjacent the first surface and includes a first portion directly adjacent to the third semiconductor layer in the first direction and a second portion spaced from the third semiconductor layer in the first direction by the first portion, and the first electrode is connected to the second portion of the first semiconductor layer such that the second portion is between the first surface and the first electrode along the first direction.

20 . A semiconductor light emitting element, comprising:
an elec

Assignees

• Toshiba Kk

Inventors

• Katsuno Hiroshi
• Ishiguro Akira

Classifications

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title