Organic Film CMP Slurry Composition and Polishing Method Using Same

Patent metadata

Field	Value
Publication number	US-2016068711-A1
Application number	US-201414785014-A
Country	US
Kind code	A1
Filing date	Apr 17, 2014
Priority date	Apr 17, 2013
Publication date	Mar 10, 2016
Grant date	—

Abstract

The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

First claim

1 . A CMP slurry composition for polishing organic films, comprising:
at least one of polar solvents and non-polar solvents; and a metal oxide abrasive, wherein the composition is acidic and wherein the organic film contains about 50 atom % to 95 atom % of carbon.

2 . The CMP slurry composition according to claim 1 , wherein the organic film has a film density of about 0.5 g/cm 3 to 2.5 g/cm 3 and a hardness of about 0.4 GPa or more.

3 . The CMP slurry composition according to claim 1 , wherein the organic film has a film density of about 1.0 g/cm 3 to 2.0 g/cm 3 and a hardness of about 1.0 GPa or more.

4 . The CMP slurry composition according to claim 1 , wherein the metal oxide abrasive comprises at least one of silica, alumina, ceria, titania, and zirconia.

5 . The CMP slurry composition according to claim 1 , comprising the metal oxide abrasive is present in an amount of about 0.1 wt % to 20 wt %.

6 . The CMP slurry composition according to claim 1 , wherein the CMP slurry composition has a pH of about 6 or less.

7 . The CMP slurry composition according to claim 1 , wherein the CMP slurry composition has a pH of about 5 or less.

8 . The CMP slurry composition according to claim 1 , further comprising an oxidant comprising: at least one of a metal salt in a multivalent oxidation state and a transition metal chelate.

9 . The CMP slurry composition according to claim 8 , comprising the oxidant in an amount of about 0.001 wt % to 15 wt %.

10 . The CMP slurry composition according to claim 8 , comprising the oxidant in an amount of about 0.01 wt % to 5 wt %.

11 . The CMP slurry composition according to claim 8 , wherein the metal salt in a multivalent oxidation state comprises at least one of ceric ammonium salts, ferric nitrates, and ferric chlorides.

12 . The CMP slurry composition according to claim 8 , wherein the transition metal chelate comprises at least one of Fe compounds including propylene diamine tetraacetic acid-Fe, and Mn compounds including propylene diamine tetraacetic acid-Mn.

13 . The CMP slurry composition according to claim 1 , wherein the composition further comprises a pH adjusting agent.

14 . The CMP slurry composition according to claim 1 , wherein the composition further comprises at least one of a polishing accelerator selected from malic acid, citric acid, formic acid, glutaric acid, oxalic acid, phthalic acid, succinic acid, tartaric acid, maleic acid, and malonic acid.

15 . The CMP slurry composition according to claim 1 , wherein the organic film is formed of a composition for preparing organic films comprising a compound having a substituted or unsubstituted aromatic group.

16 . The CMP slurry composition according to claim 15 , wherein
the compound having the substituted aromatic group is substituted with at least one of a functional group represented by Formula A and a functional group represented by Formula B:
*—(O) n -(CH 2 ) m -P(═O)(R)(R′)  <Formula A>

*—B(R)(R′)  <Formula B>

wherein in Formula A and Formula B, n is 0 or 1, m is an integer from 0 to 10, R and R′ are each independently hydrogen, a hydroxyl group, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C1 to C20 haloalkyl group, a substituted or unsubstituted C1 to C20 alkylsulfonate group, a substituted or unsubstituted C1 to C20 alkylsulfonyl group, a substituted or unsubstituted C2 to C20 alkylamide group, a substituted or unsubstituted C3 to C20 alkylester group, a substituted or unsubstituted C2 to C20 cyanoalkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 arylalkyl group, or a substituted or unsubstituted C6 to C30 aryloxy group, or R and R′ are linked to each other to form a substituted or unsubstituted C3 to C20 cycloalkyl group or a substituted or unsubstituted C3 to C20 heterocycloalkyl group.

17 . The CMP slurry composition according to claim 1 , wherein the organic film is formed from a composition for preparing organic film including a material including Formula 2:

wherein in Formula 2, n is 1≦n≦190;
R 1 is hydrogen, a hydroxyl group, a halogen atom, an allyl group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkenyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 heteroarylalkyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 heteroalkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted C1 to C40 alkylether group, a substituted or unsubstituted C7 to C20 arylalkyleneether group, a substituted or unsubstituted C1 to C30 haloalkyl group, a functional group including P, a functional group including B, or a combination thereof,
R 2 is hydrogen, an amino group, a substituted or unsubstituted C1 to C20 alkoxy group, a substituted or unsubstituted C6 to C20 aryloxy group, a dialkylamino group —NRR′ wherein R and R′ are each independently a substituted or unsubstituted C1 to C10 alkyl group or a substituted or unsubstituted C6 to C10 aryl group, a hydroxyl group, a halogen atom, an allyl group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkenyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 heteroarylalkyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 heteroalkoxy group, a substituted or unsubstituted C6 to C30 aryloxy group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted C1 to C40 alkylether group, a substituted or unsubstitute

Assignees

• Samsung Sdi Co Ltd

Inventors

• Choi Jung Min
• Nojo Haruki
• Park Yong Soon
• Yoo Yong Sik
• Kang Dong Hun
• Kim Go Un
• Kim Tae Wan

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B1/00

  Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes · CPC title