Semiconductor memory device

Patent metadata

Field	Value
Publication number	US-2016062829-A1
Application number	US-201514608715-A
Country	US
Kind code	A1
Filing date	Jan 29, 2015
Priority date	Aug 29, 2014
Publication date	Mar 3, 2016
Grant date	—

Abstract

According to one embodiment, a semiconductor memory device includes a generator to generate an error correction code. The generator includes a first encoder to calculate a first error correction code, a second encoder to calculate a second correction code, and an operation part to operate the first error correction code and the second error correction code.

First claim

What is claimed is:

1 . A semiconductor memory device, comprising:
a nonvolatile memory system; and a generator to generate an error correction code; the generator including,
a first encoder to calculate a first error correction code with respect to a first data to be encoded,
a second encoder to calculate, if the first data is unencodable, a second error correction code with respect to a third data generated from a second data corresponding to the first data, which is read from the nonvolatile memory system, and
an operation part to operate the first error correction code and the second error correction code, and wherein
the generator generates an operation result of a predetermined unit from the operation part as the error correction code.

2 . The semiconductor memory device of claim 1 , further comprising:
a controller to read and write a data received from the nonvolatile memory system through a plurality of channels; a first path to read a data from a predetermined number of channels in the plurality of channels and transfer the data to the first encoder; and a second path to read a data from channels remaining in the plurality of channels excluding the predetermined number of channels and transfer the data to the second encoder.

3 . The semiconductor memory device of claim 2 , further comprising a buffer to merge the first data and the second data corresponding to the first data read from the nonvolatile memory system together, the buffer to compensate the first data with the second data corresponding to the first data to generate the third data encodable.

4 . The semiconductor memory device of claim 1 , wherein the operation part performs operation for acquiring exclusive OR.

5 . The semiconductor memory device of claim 1 , wherein the first data to be encoded is received from a host system.

6 . The semiconductor memory device of claim 1 , wherein the first data to be encoded is a garbage collection data.

7 . The semiconductor memory device of claim 1 , comprising a first buffer to transfer the first error correction code received from the first encoder to the operation part and to transfer the first error correction code to the first encoder and a second buffer to transfer the second error correction code received from the second encoder to the operation part and to transfer the second error correction code to the second encoder.

8 . The semiconductor memory device of claim 1 , further comprising a timing controller to control a timing of input of the first error correction code and the second error correction code to the operation part to be simultaneous.

9 . The semiconductor memory device of claim 8 , further comprising an interface to be connected with a host system, wherein
the timing controller controls the timing when the data received from the host system through the interface are unencodable.

10 . A semiconductor memory device comprising a generator to generate an error correction code, the generator including a first encoder to calculate a first error correction code, a second encoder to calculate a second error correction code, and an operation part to operate exclusive OR from the first error correction code and the second error correction code, wherein the generator generates an operation result from the operation part as the error correction code.

11 . A semiconductor memory device comprising a generator to generate an error correction code, the generator including a first encoder to calculate a first error correction code, a second encoder to calculate a second error correction code, and an operation part to operate the first error correction code and the second error correction code.

Assignees

• Toshiba Kk

Inventors

• Harasawa Akinori
• Moro Hiroyuki

Classifications

• G06F11/1068 Primary

  in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence) · CPC title

• G11C29/52

  Protection of memory contents; Detection of errors in memory contents · CPC title

• H03M13/2906 Primary

  using block codes (H03M13/2957 takes precedence) · CPC title

• H03M13/1515

  Reed-Solomon codes · CPC title

• G06F11/1012

  using codes or arrangements adapted for a specific type of error (G06F11/1048 takes precedence) · CPC title