Method of manufacturing transition metal chalcogenide thin film

Patent metadata

Field	Value
Publication number	US-2016035568-A1
Application number	US-201514812856-A
Country	US
Kind code	A1
Filing date	Jul 29, 2015
Priority date	Aug 4, 2014
Publication date	Feb 4, 2016
Grant date	—

Abstract

Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film.

First claim

What is claimed is:

1 . A method of manufacturing a transition metal chalcogenide thin film, the method comprising:
providing a substrate having a transition metal film thereon; and providing a chalcogen material having a first molecular structure on the transition metal film, wherein the providing the chalcogen material having the first molecular structure comprises:
evaporating a chalcogen source to form a chalcogen material having a second molecular structure; and
decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure,
wherein the first molecular structure comprises relatively less atoms than the second molecular structure.

2 . The method of claim 1 , further comprising performing a first heating process of the substrate.

3 . The method of claim 2 , wherein a temperature of the first heating process ranges from about 50° C. to about 550° C.

4 . The method of claim 1 , wherein the providing the chalcogen material having the first molecular structure is performed after the substrate having the transition metal film thereon is exposed to air.

5 . The method of claim 1 , wherein the evaporating the chalcogen source comprises performing a second heating process of the chalcogen source.

6 . The method of claim 1 , wherein the decomposing the chalcogen material having the second molecular structure comprises performing a third heating process of the chalcogen material having the second molecular structure,
wherein a temperature of the third heating process is higher than that of the second heating process.

7 . The method of claim 1 , wherein the transition metal film is a molybdenum (Mo) film.

8 . The method of claim 1 , wherein the chalcogen material is sulfur (S).

9 . The method of claim 1 , wherein the transition metal chalcogenide thin film comprises a structure of a mono-layer or a double layer.

10 . A method of manufacturing a transition metal chalcogenide thin film, the method comprising providing a transition metal material and a chalcogen material having a first molecular structure on a substrate, wherein the providing the chalcogen material having the first molecular structure comprises:
evaporating a chalcogen source to form a chalcogen material having a second molecular structure; and decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, wherein the first molecular structure comprises relatively less atoms than the second molecular structure.

11 . The method of claim 10 , further comprising performing a first heating process of the substrate.

12 . The method of claim 11 , wherein a temperature of the first heating process ranges from about 50° C. to about 550° C.

13 . The method of claim 10 , wherein the evaporating the chalcogen source comprises performing a second heating process of the chalcogen source.

14 . The method of claim 10 , wherein the decomposing the chalcogen material having the second molecular structure comprises performing a third heating process of the chalcogen material having the second molecular structure,
wherein a temperature of the third heating process is higher than that of the second heating process.

15 . The method of claim 10 , wherein the transition metal material is molybdenum (Mo).

16 . The method of claim 10 , wherein the chalcogen material is sulfur (S).

17 . The method of claim 10 , wherein the transition metal chalcogenide thin film comprises a structure of a mono-layer or a double layer.

Assignees

• Korea Electronics Telecomm

Inventors

• Chung Yong-Duck
• Cho Daehyung
• Lee Woo Jung
• Han Won Seok

Classifications

• H10P14/3452

  Microstructure · CPC title

• H10P14/3431

  Selenides · CPC title

• H10P14/3428

  Sulfides · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title