Growth of graphene films from non-gaseous carbon sources

Patent metadata

Field	Value
Publication number	US-2016031711-A1
Application number	US-201514754983-A
Country	US
Kind code	A1
Filing date	Jun 30, 2015
Priority date	Mar 8, 2010
Publication date	Feb 4, 2016
Grant date	—

Abstract

In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

First claim

What is claimed is:

1 . A graphene film made by the process of:
a. depositing a non-gaseous carbon source onto a catalyst surface; and b. exposing the non-gaseous carbon source to at least one gas, wherein the at least one gas comprises a gas flow rate; and c. initiating the conversion of the non-gaseous carbon source to the graphene film, wherein the formed graphene film comprises one or more layers of graphene, and wherein the thickness of the graphene film is controllable by adjusting the gas flow rate.

2 . The graphene film of claim 1 , wherein the non-gaseous carbon source is selected from the group consisting of polymers, non-polymeric carbon sources, raw carbon sources, small molecules, organic compounds, fullerenes, fluorenes, carbon nanotubes, phenylene ethynylenes, sucrose, sugars, polysaccharides, proteins, carbohydrates and combinations thereof.

3 . The graphene film of claim 1 , wherein the non-gaseous carbon source comprises a raw carbon source.

4 . The graphene film of claim 3 , wherein the raw carbon source is selected from the group consisting of food sources, plants, insects, waste products, and combinations thereof.

5 . The graphene film of claim 1 , wherein the catalyst surface comprises one or more atoms selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Zr and combinations thereof.

6 . The graphene film of claim 1 , wherein the non-gaseous carbon source is doped with a doping reagent before, during or after the initiating step, and wherein the doping results in the formation of a doped graphene film.

7 . The graphene film of claim 6 , wherein the doping reagent is selected from the group consisting of melamines, boranes, carboranes, aminoboranes, ammonia boranes, phosphines, aluminum hydroxides, silanes, polysilanes, polysiloxanes, phosphites, phosphonates, sulfides, thiols, ammonia, pyridines, phosphazines, borazines, and combinations thereof.

8 . The graphene film of claim 1 , wherein the graphene film is a monolayered graphene.

9 . The graphene film of claim 1 , further comprising a step of adjusting the thickness of the graphene film by adjusting the gas flow rate.

10 . The graphene film of claim 1 , wherein the at least one gas is selected from the group consisting of nitrogen, hydrogen, argon, and combinations thereof.

11 . The graphene film of claim 1 , wherein the non-gaseous carbon source is deposited on a first surface of the catalyst, and wherein the graphene film forms on a second surface of the catalyst.

12 . The graphene film of claim 11 , wherein the first surface and the second surface are on opposite sides of the catalyst.

13 . The graphene film of claim 1 , wherein the graphene film has from about 2 layers of graphene to about 9 layers of graphene.

Assignees

• Tour James M
• Sun Zhengzong
• Yan Zheng
• Ruan Gedeng
• Peng Zhiwei
• Univ Rice William M

Inventors

• Tour James M
• Sun Zhengzong
• Yan Zheng
• Ruan Gedeng
• Peng Zhiwei

Classifications

• C01B2204/02

  Single layer graphene · CPC title

• C01B2204/04

  Specific amount of layers or specific thickness · CPC title

• C01B31/0484

  Chemistry & Metallurgy · mapped topic

• C01B31/0446 Primary

  Chemistry & Metallurgy · mapped topic

• C01B32/194 Primary

  After-treatment · CPC title