Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
High-purity 2-fluorobutane
US2016016869A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016016869-A1 |
| Application number | US-201414773043-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 6, 2014 |
| Priority date | Mar 7, 2013 |
| Publication date | Jan 21, 2016 |
| Grant date | — |
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Abstract
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The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided.
First claim
Opening claim text (preview).
1 . High-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less. 2 . The high-purity 2-fluorobutane according to claim 1 , the high-purity 2-fluorobutane having a nitrogen content of 100 ppm by volume or less and an oxygen content of 50 ppm by volume or less. 3 . The high-purity 2-fluorobutane according to claim 1 , the high-purity 2-fluorobutane having a water content of 50 ppm by volume or less. 4 . The high-purity 2-fluorobutane according to claim 1 , the high-purity 2-fluorobutane including microparticles having a size of 0.1 μm or more in a number equal to or less than 50 per ml. 5 . A method for using the high-purity 2-fluorobutane according to claim 1 as a dry etching gas.
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Classifications
of silicon-containing layers · CPC title
using plasmas · CPC title
of Group IV materials · CPC title
- H10P50/283Primary
by chemical means · CPC title
- C07C19/08Primary
containing fluorine · CPC title
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- What does patent US2016016869A1 cover?
- The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided.
- Who is the assignee on this patent?
- Zeon Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/283. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jan 21 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).