Silicon precursors for silicon nitride deposition
US-11996286-B2 · May 28, 2024 · US
Barrier film, organic el device, flexible substrate, and method for manufacturing barrier film
US2016013445A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016013445-A1 |
| Application number | US-201414768858-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 23, 2014 |
| Priority date | May 24, 2013 |
| Publication date | Jan 14, 2016 |
| Grant date | — |
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- Title
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Abstract
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A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.
First claim
Opening claim text (preview).
1 - 15 . (canceled) 16 . An organic EL device comprising: a first barrier film that contains primarily silicon nitride; a second barrier film that contains primarily silicon nitride; an organic EL element that is disposed between the first barrier film and the second barrier film; a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween; a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and the first barrier film and the second barrier film each have a higher silicon-bonded hydrogen concentration proportion than the third barrier film has. 17 . The organic EL device of claim 16 , wherein the whole area of the at least one barrier film has the silicon-bonded hydrogen concentration proportion of 55% or higher. 18 . The organic EL device of claim 16 , wherein the first barrier film and the second barrier film each have a higher total hydrogen concentration than the third barrier film has. 19 . An organic EL device comprising: a first barrier film that contains primarily silicon nitride; a second barrier film that contains primarily silicon nitride; an organic EL element that is disposed between the first barrier film and the second barrier film; a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween; a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and the first barrier film and the second barrier film each have a higher total hydrogen concentration than the third barrier film has. 20 . An organic EL device comprising: a first barrier film that contains primarily silicon nitride; a second barrier film that contains primarily silicon nitride; an organic EL element that is disposed between the first barrier film and the second barrier film; a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween; a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween; and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride, wherein at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, wherein light emitted from the organic EL element is extracted externally through the first flexible substrate, the first barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the third barrier film has, and the third barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the second barrier film has, the nitrogen-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to nitrogen to the total hydrogen concentration, or the light emitted from the organic EL element is extracted externally through the second flexible substrate, the second barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the third barrier film has, and the third barrier film has a lower nitrogen-bonded hydrogen concentration proportion than the first barrier film has. 21 . An organic EL device comprising: a first barrier film that contains primarily silicon nitride; a second barrier film that contains primarily silicon nitride; an organic EL element that is disposed between the first barrier film and the second barrier film; a thin-film transistor that is disposed between the first barrier film and the organic EL element, is electrically connected with the organic EL element, and includes an oxide semiconductor layer; and a third barrier film that is disposed between the thin-film transistor and the organic EL element, and contains primarily silicon nitride, wherein at least one of the first barrier film and the second barrier film has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 55% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration, and the first barrier film and the third barrier film each have a lower total hydrogen concentration than the second barrier film has.
Assignees
Inventors
Classifications
multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title
- C23C16/345Primary
Silicon nitride · CPC title
- H01L51/5256Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2016013445A1 cover?
- A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×10 22 atoms/cm 3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration p…
- Who is the assignee on this patent?
- Panasonic Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C16/345. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jan 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).