Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016013303-A1
Application number	US-201514860826-A
Country	US
Kind code	A1
Filing date	Sep 22, 2015
Priority date	Oct 9, 2012
Publication date	Jan 14, 2016
Grant date	—

Abstract

According to one embodiment, a semiconductor device includes a semiconductor layer, an electrode, and an insulating portion. The semiconductor layer has a first surface. The electrode is provided on the first surface of the semiconductor layer. The insulating portion includes a first layer and a second layer. The first layer covers the electrode on the first surface of the semiconductor layer and has a first internal stress along the first surface. The second layer is provided on the first layer and has a second internal stress in a reverse direction of the first internal stress.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a semiconductor layer having a first surface; a first electrode provided on the first surface of the semiconductor layer; a second electrode provided spaced from the first electrode on the first surface of the semiconductor layer; a control electrode provided between the first electrode and the second electrode on the first surface of the semiconductor layer; and a first insulating portion including a first layer and a second layer, the first layer covering the first electrode, the second electrode, and the control electrode on the first surface of the semiconductor layer and having a first internal stress along the first surface, the second layer provided on the first layer and having a second internal stress in a reverse direction of the first internal stress.

2 . The device according to claim 1 , wherein
a thickness of the second layer is thinner than a thickness of the first layer, and the second internal stress is larger than the first internal stress.

3 . The device according to claim 1 , wherein
a material composition of the second layer is different from a material composition of the first layer.

4 . The device according to claim 1 , wherein
a material of the second layer is same as a material of the first layer.

5 . The device according to claim 1 , wherein
the first internal stress is a tensile stress, and the second internal stress is a compressive stress.

6 . The device according to claim 1 , wherein the semiconductor layer includes a nitride semiconductor.

7 . The device according to claim 1 , wherein the semiconductor layer includes silicon carbide.

8 . The device according to claim 1 , further comprising a control insulating film provided between the control electrode and the first surface,
a material of the second layer being same as a material of the control insulating film.

9 . The device according to claim 8 , wherein a thickness of the second layer is same as a thickness of the control insulating film.

10 . The device according to claim 1 , further comprising:
a first extending electrode extending on the second layer and an extending end of the first extending electrode covering the control electrode; and a contact portion connecting the first extending electrode to the first electrode.

11 . The device according to claim 1 , further comprising a second insulating portion including a third layer and a fourth layer, the third layer covering the first extending electrode on the second layer and having a third internal stress along the first surface, the fourth layer provided on the third layer and having a fourth internal stress in a reverse direction of the third internal stress.

12 . The device according to claim 11 , wherein a thickness of the fourth layer is thinner than a thickness of the third layer.

13 . The device according to claim 11 , wherein a material composition of the fourth layer is different from a material composition of the third layer.

14 . The device according to claim 11 , wherein a material of the fourth layer is same as a material of the third layer.

Assignees

• Toshiba Kk

Inventors

• Takada Yoshiharu

Classifications

• H10W72/983

  Reinforcing structures, e.g. collars · CPC title

• H10W74/147

  the encapsulations being multilayered · CPC title

• H10W72/90

  Bond pads, in general · CPC title

• H10W42/121 Primary

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title

• H10D30/471

  High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] · CPC title