Organic light emitting display device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016013259-A1
Application number	US-201414543129-A
Country	US
Kind code	A1
Filing date	Nov 17, 2014
Priority date	Jul 14, 2014
Publication date	Jan 14, 2016
Grant date	—

Abstract

Disclosed are an organic light emitting display device and a manufacturing method. The organic light emitting display device includes: a data line arranged in a first direction on a substrate; a gate line arranged in a second direction on the substrate; a thin film transistor arranged at a crossing of the gate line and the data line; a pixel electrode connected to a source electrode or a drain electrode of the thin film transistor and corresponding to a white pixel region; a low reflection layer arranged opposite the white pixel region; and a light shield layer arranged opposite to the thin film transistor.

First claim

1 . An organic light emitting display device comprising:
a data line being arranged in a first direction on a substrate; a gate line being arranged in a second direction on the substrate; a thin film transistor arranged at an intersection of the gate line and the data line; a pixel electrode connected to a source electrode or a drain electrode of the thin film transistor and corresponding to a white pixel region; a low reflection layer being arranged opposite to the white pixel region; and a light shield layer arranged opposite to the thin film transistor.

2 . The organic light emitting display device of claim 1 , wherein the low reflection layer is arranged on the pixel electrode.

3 . The organic light emitting display device of claim 1 , wherein the low reflection layer is made of the same material as the light shield layer.

4 . The organic light emitting display device of claim 1 , wherein the light shield layer comprises a four-layer film comprising:
a first metal layer; a first oxide layer or a first nitride layer; a second metal layer; and a second oxide layer or a second nitride layer.

5 . The organic light emitting display device of claim 1 , wherein the source electrode, the drain electrode, or the gate constituting the thin film transistor comprises a tri-layer film comprising:
a first oxide layer or a first nitride layer; a first metal layer; and a second oxide layer or a second nitride layer.

6 . The organic light emitting display device of claim 1 , wherein the low reflection layer comprises a tri-layer film comprising:
a first oxide layer or a first nitride layer; a first metal layer; and a second oxide layer or a second nitride layer.

7 . The organic light emitting display device of claim 1 , wherein the low reflection layer comprises a tri-layer film comprising:
a first oxide layer or a first nitride layer; a first metal layer; and a semiconductor layer made of the same material as an active layer of the thin film transistor.

8 . A method for manufacturing an organic light emitting display device, the method comprising:
forming a light shield layer on a substrate in a display region defining a plurality of pixel regions formed by intersecting gate wirings for transmitting gate signals and data wirings for transmitting data signals on the substrate, the light shield layer corresponding to each pixel region; forming a buffer layer, an active layer, a gate, and an interlayer dielectric layer on the light shield layer; forming a low reflection layer in a source/drain electrode region of the interlayer dielectric layer and forming a low reflection layer in a white pixel region; and forming a source/drain electrode.

9 . The method of claim 8 , wherein the forming of the low reflection layer in the white pixel region comprises:
forming an oxide layer or a nitride layer; forming a metal layer on the oxide layer or the nitride layer; and forming an oxide layer or a nitride layer on the metal layer.

10 . A method for manufacturing an organic light emitting display device, the method comprising:
forming a light shield layer on a substrate in a display region defining a plurality of pixel regions formed by intersecting gate wirings for transmitting gate signals and data wirings for transmitting data signals on the substrate, the light shield layer corresponding to each pixel region; forming a buffer layer and an active layer on the light shield layer; forming a gate dielectric layer; forming a low reflection layer on the gate dielectric layer and forming a low reflection layer in a white pixel region of the buffer layer; and forming a gate, an interlayer dielectric layer, and a source/drain electrode.

11 . The method of claim 10 , wherein the forming of the low reflection layer in the white pixel region comprises:
forming an oxide layer or a nitride layer; forming a metal layer on the oxide layer or the nitride layer; and forming an oxide layer or a nitride layer on the metal layer.

12 . The organic light emitting display device of claim 1 , wherein the low reflection layer is disposed between the substrate and a buffer layer.

13 . The organic light emitting display device of claim 1 , wherein the light shield layer is disposed between the substrate and a buffer layer.

Assignees

• Lg Display Co Ltd

Inventors

• Yang Heejung
• Han Gyuwon
• Ho Wonjoon
• Jeong Jaekyu

Classifications

• H10K59/8792

  comprising light absorbing layers, e.g. black layers · CPC title

• H10K59/126 Primary

  Shielding, e.g. light-blocking means over the TFTs · CPC title

• H10D30/6723 Primary

  having light shields · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H01L51/56

  Electricity · mapped topic